IP Library Granted Patent US 8,471,631
Granted Patent B2
US 8,471,631 · App. 13/089,454 · Granted Jun 25, 2013

Bias circuit, power amplifier, and current mirror circuit

Inventors: Satoshi Tanaka (Kanagawa, JP); Fuminori Morisawa (Kanagawa, JP); Makoto Tabei (Kanagawa, JP)
Assignee: Murata Manufacturing Co., Ltd.
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Quick Facts
Patent No.
US 8,471,631
App. No.
13/089,454
Granted
Jun 25, 2013
Kind
B2
Abstract

There is provided a bias circuit that can operate even at low voltage and control a current reflecting a change in drain voltage. A first current mirror circuit for feeding back a drain terminal current of an FET which receives an output of an operational amplifier at a gate terminal to an input terminal of the operational amplifier and a second current mirror circuit are coupled in parallel. A variable voltage is coupled to the first current mirror circuit, and a fixed voltage is coupled to the second current mirror circuit. Even if the variable voltage becomes lower than the threshold voltage of FETs configuring the first current mirror circuit, the second current mirror circuit feeds back the current to the input terminal of the operational amplifier with reliability.

Claims (36)

1. A bias circuit comprising:

an operational amplifier;

an FET which operates with an output of the operational amplifier inputted to a gate terminal of the FET; and

a current mirror circuit for feeding back a current flowing through a drain terminal of the FET to the operational amplifier,

wherein an output current of the current mirror circuit is inputted to one input terminal of the operational amplifier, and an output current of a current source is inputted to the other input terminal, and

wherein FETs configuring the current mirror circuit have back-gate terminals, and the back-gate terminals of the FETs are coupled in common and controlled simultaneously.

2. The bias circuit according to claim 1 , wherein the current source is a constant current source.

3. The bias circuit according to claim 1 , wherein the current source is a variable current source.

4. The bias circuit according to claim 1 ,

wherein the current mirror circuit is configured with P-type FETs, and

wherein a potential of the back-gate terminals of the FETs configuring the current mirror circuit is generated from a potential of a drain terminal of a diode-coupled FET configuring the current mirror circuit.

5. The bias circuit according to claim 1 ,

wherein the current mirror circuit is configured with P-type FETs, and

wherein a potential of the back-gate terminals of the FETs configuring the current mirror circuit is generated from a source terminal of another FET which is diode-coupled to a potential of drain terminals of the FETs configuring the current mirror circuit.

6. A bias circuit comprising:

an operational amplifier;

an FET which operates with an output of the operational amplifier inputted to a gate terminal of the FET;

a current mirror circuit for feeding back a current flowing through a drain terminal of the FET to the operational amplifier; and

an offset circuit for pulling out a current flowing through a back-gate terminal of the current mirror circuit,

wherein an output current of the current mirror circuit and an output current of the offset circuit are inputted to one input terminal of the operational amplifier, and an output current of a current source is inputted to the other input terminal, and

wherein FETs configuring the current mirror circuit have back-gate terminals, and the back-gate terminals of the FETs are coupled in common and controlled simultaneously.

7. A bias circuit comprising:

an operational amplifier;

a first FET which operates with an output of the operational amplifier inputted to a gate terminal of the first FET;

a first current mirror circuit for feeding back a current flowing through a drain terminal of the first FET to one input terminal of the operational amplifier; and

a second current mirror circuit which is coupled in parallel to the first current mirror circuit,

wherein a variable voltage is inputted to FETs configuring the first current mirror circuit, and a fixed voltage is inputted to FETs configuring the second current mirror circuit.

8. The bias circuit according to claim 7 ,

wherein the FETs configuring the first current mirror circuit and the FETs configuring the second current mirror circuit have back-gate terminals, and

wherein the back-gate terminals of the FETs configuring the first current mirror circuit and the FETs configuring the second current mirror circuit are at substantially the same potential.

9. The bias circuit according to claim 7 , wherein a constant current source is coupled to the other input terminal of the operational amplifier.

10. The bias circuit according to claim 7 , wherein a variable current source is coupled to the other input terminal of the operational amplifier.

11. The bias circuit according to claim 7 , further comprising a second FET having a gate terminal to which a signal obtained by adding an output of the operational amplifier to an AC component of an RF signal is inputted,

wherein a drain terminal voltage of the second FET is the variable voltage.

12. The bias circuit according to claim 7 , wherein a power supply voltage for driving the operational amplifier is the fixed voltage.

13. A power amplifier comprising the bias circuit according to claim 1 .

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 21, 2012
From: RENESAS ELECTRONICS CORPORATION
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 027898/0663 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 19, 2011
From: TANAKA, SATOSHI; MORISAWA, FUMINORI; TABEI, MAKOTO
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 026148/0602 →
Priority Claims (1)
JP 2010-102403 · Apr 27, 2010 · national
Continuity (1)
Related Publication 20110260796A1 · Oct 27, 2011