Method, apparatus, and manufacture for flash memory write algorithm for fast bits
A method, apparatus, and manufacture for a memory device is provided. The memory device includes memory cells that each store two bits, and a memory controller. During write operations, for each bit in each memory cell that is to be programmed, the memory controller determines whether both bits of the memory cell are being programmed. While controlling an application of programming pulses to the memory cell to program the bit, if both bits of the memory cell are being programmed, the memory controller causes the application of each programming pulse to the bit to occur for a reduced duration. Otherwise, the memory controller causes the application of each programming pulse to the bit to occur for a standard duration. The reduced duration is less than three-fourths of the standard duration.
1. A memory device, comprising:
a plurality of memory cells, wherein each memory cell is configured to store two bits; and
a memory controller that is configured to control write operations to the plurality of memory cells by performing actions, including, for each bit in each memory cell of the plurality of memory cells that is to be programmed:
determining whether both bits of the memory cell are being programmed; and
controlling an application of a plurality of programming pulses to the memory cell to program the bit, wherein
if both bits of the memory cell are being programmed
causing the application of each programming pulse to the bit to occur for a reduced duration
else
causing the application of each programming pulse to the bit to occur for a standard duration, wherein the reduced duration is less than three-fourths of the standard duration.
2. The memory device of claim 1 , wherein
the memory controller is configured to employ a page buffer to determine whether both bits of the memory cell are being programmed.
3. The memory device of claim 1 , wherein
the memory controller is configured such that the reduced duration is about half of the standard duration.
4. The memory device of claim 1 , wherein
the memory controller is further configured to control the application of the plurality of programming pulses by, if both bits of the memory cell are being programmed, employing a first clock source for programming logic for applying the programming pulse, else employing a second clock source for programming logic for applying the programming pulse.
5. The memory device of claim 1 , wherein
the memory controller is configured such that the standard duration is a fixed, constant duration.
6. The memory device of claim 1 ,
the memory controller is configured such that the standard duration varies based on temperature.
7. The memory device of claim 1 , wherein
the memory controller is configured such that controlling the application of the plurality of programming pulses to the memory cells includes:
controlling an application of a first programming pulse of the plurality of programming pulses to the memory cell by:
controlling an application of a boosted word line voltage to the memory cell; and
controlling an application of a boosted bit line voltage to the memory cell;
performing a program verify to determine whether or not the bit has been programmed; and
if it is determined that the bit has not been programmed, controlling an application of another programming pulse of the plurality of programming pulses to the memory cell.
8. The memory device of claim 1 , wherein
the plurality of memory cells include means for storing information; or
wherein the memory controller includes means for controlling write operations to the plurality of memory cells.
9. A method, comprising:
controlling write operations to the plurality of memory cells, including, for each bit in each memory cell of the plurality of memory cells that is to be programmed:
determining whether both bits of the memory cell are being programmed; and
controlling an application of a plurality of programming pulses to the memory cell to program the bit, wherein
if both bits of the memory cell are being programmed
causing the application of each programming pulse to the bit to occur for a reduced duration
else
causing the application of each programming pulse to the bit to occur for a standard duration, wherein the reduced duration is less than three-fourths of the standard duration.
10. The method of claim 9 , wherein
determining whether both bits of the memory cell are being programmed is accomplished by employing a page buffer.
11. The method of claim 9 , wherein
controlling the application of the plurality of programming pulses is accomplished such that the reduced duration is about half of the standard duration.
12. A manufacture including a processor-readable medium having processor-executable code encoded therein, which when executed by one or more processors, enables actions, comprising:
controlling write operations to the plurality of memory cells, including, for each bit in each memory cell of the plurality of memory cells that is to be programmed:
determining whether both bits of the memory cell are being programmed; and
controlling an application of a plurality of programming pulses to the memory cell to program the bit, wherein
if both bits of the memory cell are being programmed
causing the application of each programming pulse to the bit to occur for a reduced duration
else
causing the application of each programming pulse to the bit to occur for a standard duration, wherein the reduced duration is less than three-fourths of the standard duration.
13. The manufacture of claim 12 , wherein
the reduced duration is about half of the standard duration.