Self-aligned, sub-wavelength optical lithography
View Patent ↗Embodiments of the invention provide a method and an apparatus for performing self-aligned, sub-wavelength optical lithography. One embodiment provides a region of photoresist above a conductive surface having a plurality of periodically arrayed openings extending therethrough. At least a portion of the region of photoresist is then exposed to a light, wherein the intensity of the light is less than the intensity required to cure the photoresist. In so doing, at least one self-aligned, sub-wavelength location in at least one location of the region of photoresist is cured.
1. A method for performing self-aligned, sub-wavelength optical lithography, said method comprising:
providing a region of photoresist above a conductive layer having a plurality of periodically arrayed openings extending therethrough;
exposing at least a portion of said region of photoresist to a light, wherein the intensity of said light is less than the intensity required to cure said photoresist; and
wherein said exposing cures at least one self-aligned sub-wavelength location in at least one location of said region of photoresist.
2. The method of claim 1 further comprising:
modifying a periodicity of said plurality of periodically arrayed openings to modify the size or shape of said at least one self-aligned, sub-wavelength location to be cured.
3. The method of claim 1 further comprising:
modifying a shape of said plurality of periodically arrayed openings to modify the size or shape of said at least one self-aligned, sub-wavelength location to be cured.
4. The method of claim 1 further comprising:
modifying the angle of incidence of said light to modify the size or shape of said at least one self-aligned, sub-wavelength location to be cured.
5. The method of claim 4 further comprising:
re-exposing at least said portion of said region of photoresist to said light, wherein the intensity of said light is less than the intensity required to cure said photoresist; and
curing a second self-aligned, sub-wavelength location in a second location of said region of photoresist.
6. The method of claim 1 further comprising:
modifying the polarization of said light to modify the size or shape of said at least one self-aligned, sub-wavelength location to be cured.
7. The method of claim 6 further comprising:
re-exposing at least said portion of said region of photoresist to said light, wherein the intensity of said light is less than the intensity required to cure said photoresist; and
curing a second self-aligned, sub-wavelength location in a second location of said region of photoresist.
8. A method for performing self-aligned, sub-wavelength optical lithography, said method comprising:
coupling a metal surface to a first surface of a semiconductor material, said metal surface comprising a plurality of periodically arrayed openings extending therethrough;
providing a region of photoresist above said metal surface;
exposing at least a portion of said region of photoresist to a light, wherein the intensity of said light is less than the intensity required to cure said photoresist; and
wherein said exposing cures at least one self-aligned sub-wavelength location in at least one location of said region of photoresist.
9. The method of claim 8 further comprising:
modifying a periodicity of said plurality of periodically arrayed openings to modify the size or shape of said at least one self-aligned, sub-wavelength location to be cured.
10. The method of claim 8 further comprising:
modifying a shape of said plurality of periodically arrayed openings to modify the size or shape of said at least one self-aligned, sub-wavelength location to be cured.
11. The method of claim 8 further comprising:
modifying the angle of incidence of said light to modify the size or shape of said at least one self-aligned, sub-wavelength location to be cured;
re-exposing at least said portion of said region of photoresist to said light, wherein the intensity of said light is less than the intensity required to cure said photoresist; and
curing a second self-aligned, sub-wavelength location in a second location of said region of photoresist.
12. The method of claim 8 further comprising:
modifying the polarization of said light to modify the size or shape of said at least one self-aligned, sub-wavelength location to be cured;
re-exposing at least said portion of said region of photoresist to said light, wherein the intensity of said light is less than the intensity required to cure said photoresist; and
curing a second self-aligned, sub-wavelength location in a second location of said region of photoresist.
13. The method of claim 8 further comprising:
rotating said semiconductor layer, said metal surface and said region of photoresist in conjunction;
re-exposing at least said portion of said region of photoresist to said light, wherein the intensity of said light is less than the intensity required to cure said photoresist; and
curing a second self-aligned, sub-wavelength location in a second location of said region of photoresist.