Method of manufacturing a ferroelectric capacitor and a ferroelectric capacitor

1. A method for manufacturing a ferroelectric capacitor comprising:

forming a lower electrode film above a substrate;

forming a ferroelectric film that includes a perovskite-type ferroelectric material above the lower electrode film;

forming an amorphous intermediate film that includes a perovskite-type conductive oxide above the ferroelectric film;

forming a first upper electrode film, that has a columnar crystal structure, comprising an oxide of at least one metal selected from a group consisting of Pt, Pd, Rh, Ir, Ru, and Os, above the intermediate film at a first temperature;

carrying out a first heat treatment to the ferroelectric film and the intermediate film in an atmosphere containing an oxidizing gas after the formation of the first upper electrode film, the ferroelectric film and the intermediate film being crystallized and having columnar crystal structures, respectively; and

forming, after the first heat treatment and above the first upper electrode film, a second upper electrode film comprising an oxide of at least one metal selected from a group consisting of Pt, Pd, Rh, Ir, Ru, and Os at a second temperature lower than the first temperature,

wherein the intermediate film comprises a conductive material containing Sr, Ru, and O, a conductive material containing La, Sr, Mn, and O, or a conductive material containing La, Sr, Co, and O.

2. The method for manufacturing the ferroelectric capacitor according to claim 1 , wherein the thickness of the intermediate film is in a range of 1 nm to 5 nm.

3. The method for manufacturing the ferroelectric capacitor according to claim 1 , wherein the first upper electrode film has a thickness in a range of 10 nm to 70 nm.

4. The method for manufacturing the ferroelectric capacitor according to claim 1 , wherein the intermediate film is formed by sputtering at a substrate temperature of 50° C. to 70° C.

5. The method for manufacturing the ferroelectric capacitor according to claim 1 , wherein the first upper electrode film is formed by sputtering at a substrate temperature of 150° C. to 350° C.

6. The method for manufacturing the ferroelectric capacitor according to claim 5 , wherein the first upper electrode film is formed under a condition where a ratio of O 2 flow rate to a total flow rate of O 2 and Ar is in a range of 20% to 50%.

7. The method for manufacturing the ferroelectric capacitor according to claim 1 , wherein the second upper electrode film is formed by sputtering at substrate temperature of 0° C. to 100° C.

8. The method for manufacturing the ferroelectric capacitor according to claim 7 , wherein the ratio of a flow rate of O 2 to a total flow rate of O 2 and Ar for forming the second upper electrode film is larger than that for the first upper electrode film.

9. The method for manufacturing the ferroelectric capacitor according to claim 1 , wherein the second upper electrode film is in an amorphous or microcrystalline state.

10. The method for manufacturing the ferroelectric capacitor according to claim 1 , wherein the forming the ferroelectric film comprises:

forming a crystallized first ferroelectric film above the lower electrode film; and

forming an amorphous or microcrystalline second ferroelectric film above the first ferroelectric film, and

the second ferroelectric film is crystallized during the first heat treatment.

11. The method for manufacturing the ferroelectric capacitor according to claim 1 , wherein the first heat treatment is performed in a mixed gas of O 2 and an inert gas under a condition where a ratio of a flow rate of O 2 to a total flow rate is equal to or less than 20%.

12. The method for manufacturing the ferroelectric capacitor according to claim 1 , wherein the perovskite-type ferroelectric material contains PZT, PLZT or CSPLZT.