Semiconductor device and manufacturing method thereof
As for a bypass capacitor, a first capacitor insulating film, together with a tunnel insulating film of a storage element, is formed of a first insulating film, a first electrode being a lower electrode, together with floating gate electrodes of the storage element, is formed of a doped·amorphous silicon film (a crystallized one), a second capacitor insulating film, together with a gate insulating film of transistors of 5 V in a peripheral circuit, is formed of a second insulating film, and a second electrode being an upper electrode, together with control gate electrodes of the storage element and gate electrodes of the transistors in the peripheral circuit, is formed of a polycrystalline silicon film.
1. A manufacturing method of a semiconductor device comprising:
forming a first insulating material on a semiconductor substrate that comprises a first region, a second region and a third region;
forming a first conductive material on the first insulating material;
patterning the first conductive material and the first insulating material to expose the semiconductor substrate of the second region, to form a first insulating film on the semiconductor substrate of the first region and a first gate on the first insulating film, and to form a fourth insulating film on the semiconductor substrate of the third region and first electrode on the fourth insulating film;
forming a second insulating material on the semiconductor substrate of the second region, the first gate and the first electrode;
patterning the second insulating material to form a second insulating film on the first gate and to remove the second insulating material on the first electrode and the semiconductor substrate of the second region;
forming a third insulating film on the semiconductor substrate of the second region and a fifth insulating film on the first electrode by oxidizing the semiconductor substrate of the second region and the first electrode after patterning the second insulating material;
forming a second conductive material on the second insulating film, the third insulating film and the fifth insulating film after oxidizing the semiconductor substrate and the first electrode;
patterning the second conductive material to form a second gate on the second insulating film, a third gate on the third insulating film and a second electrode on the fifth insulating film.
2. The manufacturing method of the semiconductor device according to claim 1 , wherein
the semiconductor substrate further comprises a fourth region; and
the second conductive material is formed in the fourth region, and
the manufacturing method of the semiconductor device according to claim 1 further comprising
forming a sixth insulating film that has a thickness different from a thickness of the third insulating film by oxidizing the semiconductor substrate of the fourth region after patterning the second insulating material; and
forming a fourth gate above the sixth insulating film by patterning the second conductive material.
3. The manufacturing method of the semiconductor device according to claim 2 , wherein
a thickness of the fifth insulating film is different from the thickness of the sixth insulating film.
4. The manufacturing method of the semiconductor device according to claim 1 , wherein
the third insulating film and fifth insulating film are formed by a radical oxidation method.
5. The manufacturing method of the semiconductor device according to claim 1 , wherein
the fifth insulating film is thicker than the sixth insulating film.
6. The manufacturing method of the semiconductor device according to claim 1 , further comprising
forming an opening in the second electrode that expose a part of the first electrode.
7. The manufacturing method of the semiconductor device according to claim 6 , wherein
forming the opening by etching the second conductive material on the first electrode and forming the third gate by etching the second conductive material in the second region are performed simultaneously.
8. The manufacturing method of the semiconductor device according to claim 2 , further comprising
forming an opening in the second electrode that expose a part of the first electrode.
9. The manufacturing method of the semiconductor device according to claim 8 , wherein
forming the opening by etching the second conductive material on the first electrode, forming the third gate by etching the second conductive material in the second region and forming the fourth gate by etching the second conductive material in the fourth region are performed simultaneously.
10. The manufacturing method of the semiconductor device according to claim 1 , wherein
the first insulating film and the fourth insulating film are formed simultaneously.
11. The manufacturing method of the semiconductor device according to claim 1 , wherein
the second gate and the second electrode are formed simultaneously.
12. The manufacturing method of the semiconductor device according to claim 1 , wherein
the third insulating film and the fifth insulating film are formed simultaneously.
13. The manufacturing method of the semiconductor device according to claim 2 , wherein
forming the third insulating film and the fifth insulating film is performed by a plurality of times of oxidizing of the semiconductor substrate of the second region and the first gate, and
forming the sixth insulating film is performed by one time of oxidizing of the semiconductor substrate of the fourth region.
14. The manufacturing method of the semiconductor device according to claim 13 , wherein
one of the plurality of times of oxidizing and the one time of oxidizing are performed simultaneously.
15. The manufacturing method of the semiconductor device according to claim 1 , wherein
an upper surface of the first electrode is exposed by patterning the second insulating material.
16. The manufacturing method of the semiconductor device according to claim 1 , wherein
oxidizing the semiconductor substrate of the second region and the first electrode is performed under the second insulating film exposed.