Bandgap voltage and temperature coefficient trimming algorithm
View Patent ↗A circuit and corresponding method for providing a reference voltage are presented. The circuit includes a current source having a magnitude with positive temperature correlation connected to a node, and a diode element connected between the node and ground, where the reference voltage is provided from the node. The circuit also includes a variable resistance connected to receive an input indicative of the circuit temperature and through which the diode element is connected to the node. The value of the variable resistance is adjusted based upon the circuit temperature input. The circuit is useful for application as a peripheral circuitry, such as on a flash or other non-volatile memory and other circuits requiring an on-chip reference voltage source.
1. A method of providing a reference voltage, comprising:
providing a circuit, the circuit including a current source having a magnitude with a positive temperature correlation connected to a node; a diode element connected between the node and ground; and a variable resistance through which the diode element is connected to the node, wherein the reference voltage is provided from the node;
receiving a indication of the temperature on the circuit; and
setting the value of the variable resistance based upon the indication of circuit temperature.
2. The method of claim 1 , wherein the circuit further includes a digital temperature sensor, whereby the indication of the temperature on the circuit is provided.
3. The method of claim 1 , the circuit further including a non-volatile programmable memory wherein the value of the variable resistance corresponding to a given value of the input indicative of the circuit temperature is held.
4. The circuit of claim 3 , wherein the non-volatile programmable memory is set by the manufacturer.
5. The method of claim 3 , the method further including:
setting the one time programmable memory in a trimming process, comprising:
measuring the voltage the node for at least a first and a second temperature;
comparing the voltages at the node for said temperatures against a test value; and
setting the values of the variable resistance corresponding to said temperatures based upon said comparing the voltages.
6. The method of claim 5 , wherein the test value is externally supplied.
7. The method of claim 5 , wherein the test value is internally supplied.
8. The method of claim 1 , wherein the value of the variable resistance varies linearly with the circuit temperature.
9. A method of sensing a non-volatile memory cell, comprising:
sensing the temperature on the circuit upon which the memory cell is formed;
adjusting the value of a variable resistance in a reference voltage generation circuit based upon the temperature on the circuit;
deriving a bias voltage from the reference voltage; and
applying the bias voltage to the non-volatile memory cell.
10. The method of claim 9 , wherein the reference voltage generation circuit includes: a current source having a magnitude with positive temperature correlation connected to a node; a diode element connected between the node and ground; and a variable resistance connected to receive a value indicative of the temperature and through which the diode element is connected to the node, wherein the value of the variable resistance is adjusted based upon the circuit temperature and wherein the reference voltage is provided from the node.