Nano-dimensional non-volatile memory cells
View Patent ↗A non-volatile memory cell that includes a first electrode; a second electrode; and an electrical contact region that electrically connects the first electrode and the second electrode, the electrical contact region has a end portion and a continuous side portion, and together, the end portion and the continuous side portion form an open cavity, wherein the memory cell has a high resistance state and a low resistance state that can be switched by applying a voltage across the first electrode and the second electrode.
1. A method of making a non-volatile memory cell comprising:
forming a first electrode;
forming an electrical contact region, the electrical contact region being disposed adjacent to the first electrode, the electrical contact region having an end portion and a continuous side wall portion, and together, the end portion and the continuous side wall portion form an open cavity, wherein the electrical contact region has a thickness of about 2 nm to about 50, wherein forming the electrical contact region comprises:
depositing an insulating material;
forming a first void in the insulating material;
depositing an electrical contact material comprising a conductive metal on at least the surfaces of the first void to form the electrical contact region;
depositing memory material on the electrical contact material; and then
forming a second electrode, the second electrode being disposed adjacent to the electrical contact region.
2. The method according to claim 1 , wherein the electrical contact material is a common layer of conductive material.
3. The method according to claim 2 , wherein the common layer of conductive material can serve as a first electrode to a plurality of non-volatile memory cells.
4. The method according to claim 1 , wherein forming the first void comprises patterning the insulating material.
5. The method according to claim 1 , wherein the insulating material is alumina or silica.
6. The method according to claim 1 , wherein the electrical contact material is deposited using PVD, ionized plasma based sputtering, long throw sputtering, CVD, or ALD.
7. The method according to claim 1 further comprising removing at least a portion of the electrical contact material.
8. The method according to claim 7 , wherein removing at least a portion of the electrical contact material comprises using CMP.
9. A method of making a non-volatile memory cell comprising:
forming a first electrode;
forming an electrical contact region, the electrical contact region being disposed adjacent to the first electrode, the electrical contact region having an end portion and a continuous side wall portion, and together, the end portion and the continuous side wall portion form an open cavity, wherein the electrical contact region has a thickness of about 2 nm to about 50, wherein forming the electrical contact region comprises:
depositing an insulating material;
forming a first void in the insulating material;
depositing an electrical contact material comprising a conductive metal on at least the surfaces of the first void to form the electrical contact region, wherein the conductive metal is a common layer of conductive metal;
depositing memory material on the electrical contact material; and then
forming a second electrode, the second electrode being disposed adjacent to the electrical contact region.
10. The method according to claim 9 , wherein the common layer of conductive material can serve as a first electrode to a plurality of non-volatile memory cells.
11. The method according to claim 9 , wherein forming the first void comprises patterning the insulating material.
12. The method according to claim 9 , wherein the insulating material is alumina or silica.
13. The method according to claim 9 , wherein the electrical contact material is deposited using PVD, ionized plasma based sputtering, long throw sputtering, CVD, or ALD.
14. The method according to claim 9 further comprising removing at least a portion of the electrical contact material.
15. The method according to claim 14 , wherein removing at least a portion of the electrical contact material comprises using CMP.