Liquid crystal display device and manufacturing method thereof
View Patent ↗A flat, solid counter electrode is formed on an organic passivation film. Before forming an interlayer insulating film on the counter electrode, plasma ashing is performed. A surface of the organic passivation film is trimmed by the plasma ashing, forming an overhang. The plasma ashing not only trims a surface of the organic passivation film but also roughens a surface of the counter electrode. This increases a contact area between the interlayer insulating film and the organic passivation film or counter electrode, increasing the adhesiveness therebetween. Further, the plasma ashing eliminates the remainder of a resist on the counter electrode, increasing the adhesiveness of the interlayer insulating film.
1. A liquid crystal display device comprising:
a TFT substrate having a thin-film transistor (TFT) thereon;
an organic passivation film disposed so that the organic passivation film covers the TFT;
a flat, solid first electrode disposed on the organic passivation film and composed of a transparent conductive film;
an interlayer insulating film disposed on the first electrode;
a comb-shaped second electrode disposed on the interlayer insulating film and composed of a transparent conductive film;
a counter substrate;
a color filter disposed beneath the counter substrate; and
a liquid crystal layer interposed between the TFT substrate and the counter substrate,
wherein an edge of the first electrode extends beyond an adjacent side of an upper portion of the organic passivation film on which the first electrode is disposed.
2. The liquid crystal display device according to claim 1 , wherein the adjacent side of the upper portion of the organic passivation film extends from a lower portion of the first electrode by 10 to 100 nm at the edge of the first electrode.
3. A liquid crystal display device comprising:
a TFT substrate having a thin-film transistor (TFT) thereon;
an organic passivation film disposed so that the organic passivation film covers the TFT;
a flat, solid first electrode disposed on the organic passivation film and composed of a transparent conductive film;
an interlayer insulating film disposed on the first electrode;
a comb-shaped second electrode disposed on the interlayer insulating film and composed of a transparent conductive film;
a counter substrate;
a color filter disposed beneath the counter substrate; and
a liquid crystal layer interposed between the TFT substrate and the counter substrate,
wherein the first electrode overhangs the organic passivation film at an edge of the first electrode.
4. The liquid crystal display device according to claim 1 , wherein the first electrode is a counter electrode.
5. The liquid crystal display device according to claim 3 , wherein the first electrode is a counter electrode.
6. The liquid crystal display device according to claim 1 , wherein the first electrode is a pixel electrode.
7. The liquid crystal display device according to claim 3 , wherein the first electrode is a pixel electrode.
8. A method for manufacturing a liquid crystal display device, the liquid crystal display device including a TFT substrate, a counter substrate, and a liquid crystal layer, the TFT substrate having a thin-film transistor (TFT) thereon, the TFT being covered by an organic passivation film, the counter substrate having a color filter therebeneath, the liquid crystal layer being interposed between the TFT substrate and the counter substrate, the method comprising the steps of:
(a) forming a flat, solid counter electrode by depositing indium tin oxide (ITO) on the organic passivation film and patterning the ITO;
(b) performing plasma ashing on the TFT substrate after step (a); and
(c), after step (b), forming an interlayer insulating film and then forming a comb-shaped pixel electrode on the interlayer insulating film using ITO.
9. A method for manufacturing a liquid crystal display device, the liquid crystal display device including a TFT substrate, a counter substrate, and a liquid crystal layer, the TFT substrate having a thin-film transistor (TFT) thereon, the TFT being covered by an organic passivation film, the counter substrate having a color filter therebeneath, the liquid crystal layer being interposed between the TFT substrate and the counter substrate, the method comprising the steps of:
(a) forming a flat, solid pixel electrode by depositing indium tin oxide (ITO) on the organic passivation film and patterning the ITO;
(b) performing plasma ashing on the TFT substrate after step (a); and
(c), after step (b), forming an interlayer insulating film and then forming a comb-shaped counter electrode on the interlayer insulating film using ITO.
10. The method according to claim 8 , wherein the interlayer insulating film is formed by chemical vapor deposition (CVD).
11. The method according to claim 9 , wherein the interlayer insulating film is formed by chemical vapor deposition (CVD).
12. The method according to claim 8 , wherein step (b) of performing plasma ashing on the TFT substrate results in an edge of the counter electrode extending beyond an adjacent side of an upper portion of the organic passivation film on which the counter electrode is formed.
13. The method according to claim 9 , wherein step (b) of performing plasma ashing on the TFT substrate results in an edge of the pixel electrode extending beyond an adjacent side of an upper portion of the organic passivation film on which the pixel electrode is formed.