Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device includes forming a silicon substrate having first and second surfaces, the silicon substrate including no oxide film or an oxide film having a thickness no greater than 100 nm, forming a first oxide film at least on the second surface of the silicon substrate, forming a first film by covering at least the first surface, forming a mask pattern on the first surface by patterning the first film, forming a device separating region on the first surface by using the mask pattern as a mask, forming a gate insulating film on the first surface, forming a gate electrode on the first surface via the gate insulating film, forming a source and a drain one on each side of the gate electrode, and forming a wiring layer on the silicon substrate while maintaining the first oxide film on the second surface.
1. A method for manufacturing a semiconductor device, comprising:
forming a substrate having first and second surfaces, the substrate including no oxide film or an oxide film having a thickness no greater than 100 nm;
forming a first film by covering at least the first surface;
forming a first oxide film on the first and second surfaces;
removing the first oxide film formed on the first surface;
forming a mask pattern on the first surface by patterning the first film;
forming a device separating region on the first surface by using the mask pattern as a mask;
forming a gate insulating film on the first surface;
forming a gate electrode on the first surface via the gate insulating film;
forming a source and a drain on each side of the gate electrode; and
forming a wiring layer on the substrate while leaving the first oxide film on the second surface.
2. The method as claimed in claim 1 , wherein forming the gate insulating film is performed by placing a plurality of the substrates in a vertical furnace and thermally processing the plurality of the substrates.
3. The method as claimed in claim 2 , wherein the thermal processing is performed subsequent to the removing of the first oxide film.
4. The method as claimed in claim 1 , wherein forming the device separating region includes
forming a device separating groove on the first surface by using the mask pattern;
depositing a silicon oxide film on the first surface; and
removing the silicon oxide film except at an area of the first surface where the device separating groove is formed;
wherein the silicon oxide film is removed by using a chemical mechanical polishing process and a HydroFluoric (HF) process.
5. The method as claimed in claim 1 ,
wherein the first film is a single layer film including a poly-silicon film.
6. The method as claimed in claim 1 , wherein the first oxide film has a thickness no less than 200 nm.
7. The method as claimed in claim 1 , wherein forming the wiring layer includes forming a Cu wiring layer.
8. The method as claimed in claim 1 , wherein the first film is a single layer film including a silicon oxide film.
9. The method as claimed in claim 1 , wherein the first film is a single layer film including a silicon nitride film or a silicon oxynitride film.
10. The method as claimed in claim 1 , wherein the first film is a single layer film including an amorphous silicon film.
11. The method as claimed in claim 1 , wherein the first film is a multilayer film including two or more of a poly-silicon film, a silicon oxide film, a silicon nitride film, an amorphous silicon film, and a silicon oxynitride film.
12. The method as claimed in claim 1 , wherein the substrate is a silicon substrate.
13. The method as claimed in claim 1 , wherein the substrate is a 300 mm wafer.
14. The method as claimed in claim 1 , wherein a size of the substrate is that of a 300mm wafer.
15. The method as claimed in claim 1 , wherein the wiring layer includes a multilayered wiring structure.