Multi-bit STRAM memory cells
View Patent ↗A multi-bit spin torque magnetic element that has a ferromagnetic pinned layer having a pinned magnetization orientation, a non-magnetic layer, and a ferromagnetic free layer having a magnetization orientation switchable among at least four directions, the at least four directions being defined by a physical shape of the free layer. The magnetic element has at least four distinct resistance states. Magnetic elements with at least eight magnetization directions are also provided.
1. A system comprising:
a multi-bit spin torque magnetic element comprising:
a ferromagnetic pinned layer having a pinned magnetization orientation;
a ferromagnetic free layer having a magnetization orientation switchable among at least four directions, the at least four directions defined by a physical shape of the free layer; and
a non-magnetic layer between the pinned layer and the free layer, the magnetic element having at least four distinct resistance states; and
a tunable voltage source,
wherein the tunable voltage source is electrically connected to the multi-bit spin torque magnetic element.
2. The system of claim 1 , wherein the at least four directions are 90 degrees apart.
3. The system of claim 1 , wherein the at least four directions are not 90 degrees apart.
4. The system of claim 1 wherein the free layer has a magnetization orientation switchable among at least eight directions, the eight directions defined by the physical shape of the free layer, and the magnetic element having at least eight distinct resistance states.
5. A system comprising:
a multi-bit spin torque magnetic element comprising:
a ferromagnetic pinned layer having a pinned magnetization orientation;
a ferromagnetic free layer having a magnetization orientation switchable among at least four directions, the free layer having a physical shape with at least four arms, with one of the four directions extending between adjacent arms; and
a non-magnetic layer between the pinned layer and the free layer; and
a tunable voltage source, wherein the tunable voltage source is electrically connected to the multi-bit spin torque magnetic element.
6. The system of claim 5 , wherein each of the at least four arms has a length and a width, and wherein each of the at least four arms has the same length as width.
7. The system of claim 5 , wherein each of the at least four arms has a length and a width, and wherein each of the at least four arms has the same length and width.
8. The system of claim 5 , wherein each of the at least four arms has a length and a width that are the same, and wherein each of the at least four arms has the same length and width.
9. The system of claim 5 , wherein each of the at least four arms has a length and a width, and wherein the width of each of the at least four arms changes along the length of the arm.
10. The system of claim 5 , wherein the at least four directions are 90 degrees apart.
11. The system of claim 5 , wherein the at least four directions are not 90 degrees apart.
12. The system of claim 5 wherein the free layer has a magnetization orientation switchable among at least eight directions, the free layer has a physical shape with at least eight arms, with one of the eight directions extending between adjacent arms.
13. The system of claim 12 , wherein each of the at least eight arms has a length and a width, and wherein the width of each of the at least eight arms changes along the length of the arm.
14. The system of claim 5 , wherein the pinned layer magnetization orientation is between two adjacent of the at least four directions.
15. The system of claim 5 , wherein the multi-bit spin torque magnetic element is electrically connected to a transistor.
16. A method of affecting a resistance state of a magnetic element, the method comprising:
providing a magnetic element that comprises
a ferromagnetic pinned layer having a pinned magnetization orientation;
a ferromagnetic free layer having a magnetization orientation switchable among at least four directions, the at least four directions defined by a physical shape of the free layer; and
a non-magnetic layer between the pinned layer and the free layer,
wherein the magnetic element is a spin-torque magnetic element and has at least four distinct resistance states; and
driving a first current through the magnetic element in order to switch the resistance state of the magnetic element, wherein the current is from a tunable voltage source.
17. The method of claim 16 further comprising determining the resistance state of the magnetic element by passing a current through the magnetic element.
18. The method of claim 17 , wherein the current for determining the resistance state is less than the current to switch the resistance state.
19. The method of claim 18 , wherein the current for determining the resistance is tens of microAmps.
20. The method of claim 17 further comprising driving a second current through the magnetic element in order to switch the resistance state of the magnetic element, wherein the second current has a different voltage than the first current.
21. The method of claim 16 further comprising applying two or more short, high voltage pulses to the magnetic element.