IP Library Granted Patent US 8,685,597
Granted Patent B2
US 8,685,597 · App. 13/268,285 · Granted Apr 1, 2014

Forming a bridging feature using chromeless phase-shift lithography

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Quick Facts
Patent No.
US 8,685,597
App. No.
13/268,285
Granted
Apr 1, 2014
Kind
B2
Abstract

First and second anchor features are formed on a photolithography mask, each having a respective center point. An elongated, chromeless, bridging feature is formed between the anchor features. The bridging feature is offset from the center points of the anchor feature to minimize distortions of a corresponding photoresist feature formed by the bridging feature.

Claims (26)

1. A method comprising:

forming first and second anchor features on a photolithography mask, each having a respective center point;

forming an elongated, chromeless, bridging feature between the anchor features, wherein the bridging feature is offset from the center points of the anchor feature to minimize distortions of a corresponding photoresist feature formed by the bridging feature; and

forming a feature of a read/write head using a region of interest of the corresponding photoresist feature.

2. The method of claim 1 , wherein the corresponding photoresist feature extends between center points of respective anchor photoresist features formed by the first and second anchor features of the photolithography mask.

3. The method of claim 1 , wherein the corresponding photoresist feature is a line, and wherein the offset minimizes bending along a length of the corresponding photoresist feature.

4. The method of claim 1 , wherein the first and second anchor features are formed from an opaque material.

5. The method of claim 1 , wherein a span of the corresponding photoresist feature is at least ten times greater than a width of the corresponding photoresist feature.

6. The method of claim 5 , wherein the width of the corresponding photoresist feature is between 30 nm and 50 nm.

7. A photolithography mask, comprising:

first and second anchor features each having a respective center point; and

an elongated, chromeless, bridging feature extending between the anchor features, wherein the bridging feature is offset from the center points of the anchor feature to minimize distortions of a corresponding photoresist feature formed by the bridging feature;

wherein a region of interest of the corresponding photoresist feature is used to form a feature of a read/write head.

8. The photolithography mask of claim 7 , wherein the corresponding photoresist feature extends between center points of respective anchor photoresist features formed by the first and second anchor features of the photolithography mask.

9. The photolithography mask of claim 7 , wherein the bridging feature is a line, and wherein the offset minimizes bending along a length of the corresponding photoresist feature.

10. The photolithography mask of claim 7 , wherein the first and second anchor features comprise an opaque material.

11. The photolithography mask of claim 7 , wherein a span of the corresponding photoresist feature is at least ten times greater than a width of the corresponding photoresist feature.

12. The photolithography mask of claim 11 , wherein the width of the corresponding photoresist feature is between 30 nm and 50 nm.

13. An article of manufacture comprising a read/write head prepared by a process comprising:

forming photoresist anchor features on the article of manufacture via first and second anchor features of a photolithography mask, each of the first and second anchor features having a respective center point;

forming a bridging photoresist feature on the article of manufacture between the anchor features via a bridging feature of the photolithography mask, wherein the bridging feature is offset from the center points of the anchor feature to minimize distortions of the bridging photoresist feature; and

forming a feature of the read/write head using a region of interest of the bridging feature.

14. The article of manufacture of claim 13 , wherein a width of the bridging photoresist feature is between 30 nm and 50 nm, and wherein a span of the bridging photoresist feature is at least ten times greater than the width of the bridging photoresist feature.

15. The article of manufacture of claim 13 , wherein the bridging photoresist feature extends between center points of the photoresist anchor features.

16. The article of manufacture of claim 13 , wherein the bridging photoresist feature is a line, and wherein the offset minimizes bending along a length of the bridging photoresist feature.

17. The article of manufacture of claim 13 , wherein the first and second anchor features comprise an opaque material.

Assignments (6)
RELEASE OF SECURITY INTEREST Recorded Feb 28, 2025
From: THE BANK OF NOVA SCOTIA
To: SEAGATE TECHNOLOGY US HOLDINGS, INC.; EVAULT, INC. (F/K/A I365 INC.); SEAGATE TECHNOLOGY LLC
Reel/Frame 070363/0903 →
RELEASE OF SECURITY INTEREST Recorded Jul 23, 2024
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: SEAGATE TECHNOLOGY LLC; EVAULT INC
Reel/Frame 068457/0076 →
RELEASE OF SECURITY INTEREST Recorded May 20, 2024
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: SEAGATE TECHNOLOGY LLC; EVAULT, INC. (F/K/A I365 INC.); SEAGATE TECHNOLOGY US HOLDINGS, INC.
Reel/Frame 067471/0955 →
SECURITY AGREEMENT Recorded Oct 15, 2012
From: SEAGATE TECHNOLOGY LLC; EVAULT, INC. (F/K/A I365 INC.); SEAGATE TECHNOLOGY US HOLDINGS, INC.
To: THE BANK OF NOVA SCOTIA, AS ADMINISTRATIVE AGENT
Reel/Frame 029127/0527 →
SECOND LIEN PATENT SECURITY AGREEMENT Recorded Oct 15, 2012
From: SEAGATE TECHNOLOGY LLC; EVAULT, INC. (F/K/A I365 INC.); SEAGATE TECHNOLOGY US HOLDINGS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 029253/0585 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 7, 2011
From: SULLIVAN, DANIEL B.; KIM, SANGHO
To: SEAGATE TECHNOLOGY LLC
Reel/Frame 027031/0374 →