Forming a bridging feature using chromeless phase-shift lithography
First and second anchor features are formed on a substrate via a chromeless photolithography process. An elongated bridging feature is formed between the anchor features on the substrate via the chromeless photolithography process. A distance between the anchor features is sufficient to minimize lateral displacement at a center portion of the bridging feature without significant reduction in mechanical stability of the bridging feature.
1. A method comprising:
forming first and second anchor features on a substrate via a chromeless photolithography process;
forming an elongated bridging feature between the anchor features on the substrate via the chromeless photolithography process, wherein a distance between the anchor features is sufficient to minimize lateral displacement at a center portion of the bridging feature without significant reduction in mechanical stability of the bridging feature; and
forming a magnetic read/write head using the center portion of the bridging feature.
2. The method of claim 1 , wherein the first and second anchor features are formed via an opaque masking material on a photolithography mask.
3. The method of claim 1 , wherein the distance between the anchor features alleviates optical effects caused by features of a photolithography mask used to form the anchor features, and wherein the alleviation of optical effects minimizes the lateral displacement of the center portion of the bridging feature.
4. The method of claim 1 , wherein the distance between the anchor features is at least ten times greater than a width of the bridging feature.
5. The method of claim 4 , wherein the width of the bridging feature is between 30 nm and 50 nm, and wherein the distance between the anchor features is at least 500 nm.
6. The method of claim 1 , wherein the distance between the anchor features is selected to improve a lithographic process window associated with forming the bridging feature.
7. The method of claim 1 , wherein minimizing the lateral displacement at the center portion of the bridging feature comprises minimizing bending at the center portion.
8. The method of claim 1 , wherein forming the magnetic read/write head comprises removing the first and second anchor features and a portion of the elongated bridging feature outside the center portion.
9. An apparatus comprising:
a substrate;
first and second anchor features formed on the substrate via chromeless photolithography; and
an elongated bridging feature extending between the anchor features formed on the substrate via chromeless photolithography, wherein a distance between the anchor features is sufficient to minimize lateral displacement at a center portion of the bridging feature without significant reduction in mechanical stability of the bridging feature, the center portion of the bridging feature being used to form a magnetic read/write head on the substrate.
10. The apparatus of claim 9 , wherein the distance between the anchor features alleviates optical effects caused by features of a photolithography mask used to form the anchor features, and wherein the alleviation of optical effects minimizes the lateral displacement of the center portion of the bridging feature.
11. The apparatus of claim 9 , wherein the distance between the anchor features is at least ten times greater than a width of the bridging feature.
12. The apparatus of claim 11 , wherein the width of the bridging feature is between 30 nm and 50 nm, and wherein the distance between the anchor features is at least 500 nm.
13. The apparatus of claim 9 , wherein the distance between the anchor features is selected to improve a lithographic process window associated with forming the bridging feature.
14. The apparatus of claim 9 , wherein minimizing the lateral displacement at the center portion of the bridging feature comprises minimizing bending at the center portion.
15. A photolithography mask comprising:
first and second anchor features; and
an elongated, chromeless, bridging feature extending between the anchor features, wherein a distance between the anchor features is sufficient to minimize lateral displacement at a center portion of a corresponding bridging photoresist feature formed by the bridging feature without significant reduction in mechanical stability of the corresponding bridging photoresist feature, the center portion of the bridging feature used to form a magnetic read/write head.
16. The photolithography mask of claim 15 , wherein the first and second anchor features are formed via an opaque masking material on the photolithography mask.
17. The photolithography mask of claim 15 , wherein the distance between the anchor features alleviates optical effects caused by the anchor features, and wherein the alleviation of optical effects minimizes the lateral displacement of the center portion of corresponding bridging photoresist feature.
18. The photolithography mask of claim 15 , wherein the distance between the anchor features is at least ten times greater than a width of the bridging feature.
19. The photolithography mask of claim 18 , wherein the width of the bridging feature is between 30 nm and 50 nm.
20. The photolithography mask of claim 19 , wherein the distance between the anchor features is at least 500 nm.