IP Library Granted Patent US 8,771,847
Granted Patent B2
US 8,771,847 · App. 13/274,139 · Granted Jul 8, 2014

Reader stop-layers

Inventors: Carolyn Pitcher Van Dorn (Crystal, MN); Thomas Roy Boonstra (Chaska, MN); Eric Walter Singleton (Maple Plain, MN); Shaun Eric McKinlay (Eden Prairie, MN)
Assignee: Seagate Technology
G11B5/11G11B5/112G11B5/40
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Quick Facts
Patent No.
US 8,771,847
App. No.
13/274,139
Granted
Jul 8, 2014
Kind
B2
Abstract

Tolerances for manufacturing reader structures for transducer heads continue to grow smaller and storage density in corresponding storage media increases. Reader stop layers may be utilized during manufacturing of reader structures to protect various layers of the reader structure from recession and/or scratches while processing other non-protected layers of the reader structure. For example, the stop layer may have a very low polish rate during mechanical or chemical-mechanical polishing. Surrounding areas may be significantly polished while a structure protected by a stop layer with a very low polish rate is substantially unaffected. The stop layer may then be removed via etching, for example, after the mechanical or chemical-mechanical polishing is completed.

Claims (22)

1. A read sensor comprising:

a first stop layer that protects a directly adjacent shield element from recession during at least one of chemical polishing and mechanical polishing of the read sensor, wherein the first stop layer has a thickness less than about 20 angstroms.

2. The read sensor of claim 1 , further comprising: a second stop layer that protects a directly adjacent alumina layer from recession during mechanical polishing of another adjacent layer.

3. The read sensor of claim 1 , wherein the first stop layer protects a directly adjacent alumina insert from recession during mechanical polishing of adjacent re-deposition material.

4. The read sensor of claim 2 , wherein the first stop layer is positioned between the shield element and the second stop layer.

5. The read sensor of claim 1 , wherein the first stop layer comprises Ruthenium.

6. A method of manufacturing a read sensor, comprising:

depositing a first stop-layer directly adjacent to a shield element, wherein the first stop-layer protects the shield element from recession during at least one of chemical polishing and mechanical polishing of the read sensor, wherein the first stop layer has a thickness less than about 20 angstroms.

7. The method of claim 6 , further comprising: depositing a second stop-layer that protects a directly adjacent insulating layer from recession during mechanical polishing of the read sensor.

8. The method of claim 7 , wherein the insulating layer is an alumina insert.

9. The method of claim 7 , wherein the first stop layer is positioned between the shield element and the second stop layer.

10. The method of claim 6 , wherein the first stop-layer comprises Ruthenium.

11. The method of claim 6 , further comprising:

mechanically polishing material adjacent the shield element without causing significant recession of the first stop layer.

12. A read element comprising:

a stop-layer that protects an adjacent layer from recession during at least one of chemical polishing and mechanical polishing of the read element, wherein the stop layer has a thickness less than about 20 angstroms.

13. The read element of claim 12 , wherein the stop layer is adjacent to re-deposition material.

14. The read element of claim 12 , wherein the adjacent layer protected from recession is a layer of a reader stack.

15. The read element of claim 12 , wherein the adjacent layer protected from recession is an alumina insert.

16. The read element of claim 12 , wherein the stop-layer protects one or more free layers and spacer layers from recession during mechanical polishing of adjacent re-deposition material.

17. The read element of claim 12 , wherein the stop-layer comprises Ruthenium.

18. The read element of claim 12 , wherein the stop-layer comprises at least one of tantalum and chromium.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Feb 28, 2025
From: THE BANK OF NOVA SCOTIA
To: SEAGATE TECHNOLOGY US HOLDINGS, INC.; EVAULT, INC. (F/K/A I365 INC.); SEAGATE TECHNOLOGY LLC
Reel/Frame 070363/0903 →
RELEASE OF SECURITY INTEREST Recorded Jul 23, 2024
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: SEAGATE TECHNOLOGY LLC; EVAULT INC
Reel/Frame 068457/0076 →
RELEASE OF SECURITY INTEREST Recorded May 20, 2024
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: SEAGATE TECHNOLOGY LLC; EVAULT, INC. (F/K/A I365 INC.); SEAGATE TECHNOLOGY US HOLDINGS, INC.
Reel/Frame 067471/0955 →
SECOND LIEN PATENT SECURITY AGREEMENT Recorded Oct 15, 2012
From: SEAGATE TECHNOLOGY LLC; EVAULT, INC. (F/K/A I365 INC.); SEAGATE TECHNOLOGY US HOLDINGS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 029253/0585 →
SECURITY AGREEMENT Recorded Oct 15, 2012
From: SEAGATE TECHNOLOGY LLC; EVAULT, INC. (F/K/A I365 INC.); SEAGATE TECHNOLOGY US HOLDINGS, INC.
To: THE BANK OF NOVA SCOTIA, AS ADMINISTRATIVE AGENT
Reel/Frame 029127/0527 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 27, 2012
From: VAN DORN, CAROLYN PITCHER; BOONSTRA, THOMAS ROY; SINGLETON, ERIC WALTER; MCKINLAY, SHAUN ERIC
To: SEAGATE TECHNOLOGY LLC
Reel/Frame 029036/0375 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 14, 2011
From: VAN DORN, CAROLYN PITCHER; BOONSTRA, THOMAS ROY
To: SEAGATE TECHNOLOGY LLC
Reel/Frame 027067/0440 →
Continuity (1)
Related Publication 20130095349A1 · Apr 18, 2013