Memory cell with radial barrier
Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness, deposition method, material composition, and/or extent along the cell layers to enhance the effective magnetic properties of the free layer, including the effective coercivity, effective magnetic anisotropy, effective dispersion in magnetic moment, or effective spin polarization.
1. A magnetic tunnel junction cell comprising:
a ferromagnetic free layer, a ferromagnetic pinned layer, and a barrier layer therebetween;
a ferromagnetic pinning layer positioned adjacent the ferromagnetic pinned layer
a protective layer radially around at least the free layer;
an electrically insulating isolation layer radially around at least the barrier layer and around the protective layer;
an annular layer radially around the electrically insulating isolation layer, the annular layer in contact with the ferromagnetic pinning layer;
a first electrode configured to be in electrical contact with the ferromagnetic pinned layer; and
a second electrode configured to be in electrical contact with the ferromagnetic free layer,
wherein the first electrode and the second electrode are only electrically connected through the ferromagnetic free layer.
2. The magnetic tunnel junction cell of claim 1 , wherein the protective layer functions to enhance the effective magnetic properties of the ferromagnetic free layer.
3. The magnetic tunnel junction cell of claim 1 , wherein the protective layer comprises Si 3 N 4 , SiO 2 , SiO x N y , AlN, MgO, Al 2 O 3 , Ta 2 O 5 , Ta, Ru, W, TiW, TaN or TiN.
4. The magnetic tunnel junction cell of claim 1 , wherein the isolation layer functions to protect the barrier layer from energetic ions or chemical species.
5. The magnetic tunnel junction cell of claim 1 , wherein the isolation layer comprises Si 3 N 4 , SiO 2 , SiO x N y , SiOCN, Ta 2 O 5 , Al 2 O 3 or MgO.
6. The magnetic tunnel junction cell of claim 1 , wherein the isolation layer is radially around the barrier layer, the free layer, and at least a portion of the protective layer.
7. The magnetic tunnel junction cell of claim 1 , wherein the isolation layer functions to inhibit and/or prevent the conduction of current from the first electrode to the second electrode through the annular layer.
8. The magnetic tunnel junction cell of claim 1 , wherein the annular layer comprises an antiferromagnetically ordered material, oxide thereof or nitride thereof.
9. The magnetic tunnel junction cell of claim 1 further comprising a non-porous barrier layer that radially surrounds the annular layer.
10. The magnetic tunnel junction of claim 1 further comprising an electrically conductive layer proximate the free layer opposite the barrier layer.
11. The magnetic tunnel junction cell of claim 10 , wherein the electrically conductive layer comprises Ru, Ti, W, Ta, or alloys thereof.
12. The magnetic tunnel junction cell of claim 10 further comprising an electrically insulating material radially encircling the non-porous barrier layer.
13. A magnetic tunnel junction cell comprising:
a ferromagnetic free layer, a ferromagnetic pinned layer, and a barrier layer therebetween;
a protective layer radially around at least the free layer and the barrier layer;
an electrically insulating isolation layer radially around at least the protective layer;
an annular layer radially around the electrically insulating isolation layer and in contact with the ferromagnetic pinned layer;
a non-porous barrier layer radially around the annular layer;
a first electrode configured to be in electrical contact with the ferromagnetic pinned layer; and
a second electrode configured to be in electrical contact with the ferromagnetic free layer.
14. The magnetic tunnel junction cell of claim 13 , wherein the protective layer comprises Si 3 N 4 , SiO 2 , SiO x N y , AlN, MgO, Al 2 O 3 , Ta 2 O 5 , Ta, Ru, W, TiW, TaN or TiN.
15. The magnetic tunnel junction cell of claim 13 , wherein the isolation layer comprises Si 3 N 4 , SiO 2 , SiO x N y , SiOCN, Ta 2 O 5 , Al 2 O 3 or MgO.
16. The magnetic tunnel junction cell of claim 13 , wherein the isolation layer comprises Ta 2 O 5 , Al 2 O 3 or MgO.
17. The magnetic tunnel junction cell of claim 13 , wherein the isolation layer has a thickness from about 2 nm to about 30 nm.
18. The magnetic tunnel junction cell of claim 13 , wherein the annular layer comprises an antiferromagnetically ordered material, oxide thereof or nitride thereof.
19. The magnetic tunnel junction of claim 13 , further comprising an electrically conductive layer proximate the free layer opposite the barrier layer.
20. The magnetic tunnel junction cell of claim 19 , wherein the electrically conductive layer comprises Ru, Ti, W, Ta, or alloys thereof.
21. The magnetic tunnel junction cell of claim 13 further comprising an electrically insulating material radially encircling the non-porous barrier layer.