Semiconductor device and method of manufacturing the same
View Patent ↗A method for manufacturing a semiconductor device including a ferroelectric capacitor formed over a semiconductor substrate, wherein the ferroelectric capacitor including a lower electrode, a ferroelectric film formed on the lower electrode, and an upper electrode formed on the ferroelectric film, and the upper electrode including a first conductive film formed of a first conductive noble metal oxide, and a second conductive film formed of a metal nitride compound formed on the first conductive film.
1. A method of manufacturing a semiconductor device, comprising:
forming a lower electrode over a semiconductor substrate;
forming a ferroelectric film on the lower electrode;
forming an upper electrode on the ferroelectric film, wherein the upper electrode is formed by forming a first conductive film of a first noble metal oxide film over the ferroelectric film,
forming a second conductive film of a second noble metal oxide film, of which an oxidation degree is higher than the oxidation degree of the first conductive film, on the first conductive film by sputter method under condition in which a ratio of a flow rate of oxygen to a flow rate of argon is larger than the ratio in forming the first conductive film, on the first conductive film, and
forming a third conductive film of a metal compound including nitride over the second conductive film.
2. The method of claim 1 , wherein the third conductive film is formed by a sputter method.
3. The method of claim 1 , wherein
after forming the second conductive film but before forming the third conductive film, forming a fourth conductive film of noble metal on the second conductive film.
4. The method of claim 1 , wherein
after forming the ferroelectric film and the first conductive film, annealing the semiconductor substrate in an atmosphere including inert gas and oxidizing gas at a first temperature.
5. The method of claim 1 , wherein
after forming the second conductive film, annealing the semiconductor substrate in an atmosphere including of inert gas and oxidizing gas at a second temperature.
6. The method of claim 1 , wherein
after forming the ferroelectric film but before forming the first conductive film, annealing the ferroelectric film in an atmosphere including of inert gas and oxidizing gas at a third temperature, and forming an amorphous ferroelectric film that is thinner than the ferroelectric film on the ferroelectric film, and
after forming the first conductive film on the amorphous ferroelectric film, crystallizing the ferroelectric film by annealing the ferroelectric film in an atmosphere including oxygen at a temperature that is higher than the third temperature.