State-monitoring memory element
View Patent ↗Embodiments of the invention relate to a state-monitoring memory element. The state-monitoring memory element may be implemented by degrading an input voltage supply to the state-monitoring memory element across a diode and/or a transistor. One or more current sources may be used to stress the state-monitoring memory element. A logic analyzer may be used to analyze the integrity of the state-monitoring memory element and trigger appropriate actions in the IC, e.g., reset, halt, remove power, interrupt, responsive to detecting a failure in the state-monitoring memory element. Multiple state-monitoring memory elements may be disturbed in different locations on the IC for better coverage.
1. A system, comprising:
a first circuit comprising memory elements of a memory array that are powered at an input supply voltage, wherein the input supply voltage changes over time; and
a second circuit coupled to a state-monitoring memory element of the memory array, the state-monitoring memory element being representative of a voltage sensitivity of other memory elements of the memory array, wherein the second circuit is configured to determine when the input supply voltage drops below a threshold voltage at which the state-monitory memory element operates, and wherein the second circuit comprises a circuit to provide a degraded ground to the state-monitoring memory element.
2. A system, comprising;
a first circuit comprising memory elements of a memory array that are powered at an input supply voltage, wherein the input supply voltage changes over time; and
a second circuit coupled to a state-monitoring memory element of the memory array, the state-monitoring memory element being representative of a voltage sensitivity of other memory elements of memory array, the second circuit is configured to determine when the input supply voltage drops below a threshold voltage at which the state-monitory memory element operates, and wherein the second circuit comprises at least one current source coupled to the state-monitoring memory element.
3. A system, comprising:
a first circuit comprising memory elements of a memory array that are powered at an input supply voltage, wherein the input supply voltage changes over time; and
a second circuit coupled to a state-monitoring memory element of the memory array, the state-monitoring memory element being representative of a voltage sensitivity of other memory elements of the memory array, wherein the second circuit is configured to determine when the input supply voltage drops below a threshold voltage at which the state-monitory memory element operates, wherein the second circuit is configured to detect when the input supply voltage drops below the threshold voltage and to issue a reset signal responsive to the input supply voltage drop.
4. The system of claim 3 , wherein the second circuit comprises a voltage supply circuit configured to provide a degraded input supply voltage to the state-monitoring memory element and to provide the input supply voltage to the other memory elements of the memory array, wherein the degraded input supply voltage is less than the input supply voltage.
5. The system of claim 3 , wherein the state-monitoring memory element is substantially identical to one or more of the other memory elements of the memory array.
6. The system of claim 4 , wherein the state-monitoring memory element comprises a reduced ability to retain a logic state compared to one of the other memory elements, and wherein the state-monitoring memory element is configured to lose the logic state before the one memory element when the degraded input supply voltage drops below the threshold voltage.
7. The system of claim 6 , wherein the second circuit further comprises a voltage supply circuit configured to supply the degraded input supply voltage to the state-monitoring memory element to have the reduced ability.
8. The system of claim 7 , wherein the second circuit further comprises a failure detection element configured to detect a failure by the state-monitoring memory element to retain the logic state and responsive to the detection to generate an indicator of the failure, and wherein the failure detection element is further configured to issue an interrupt signal to a system processor.
9. The system of claim 8 , wherein the voltage supply circuit comprises one of a diode, a transistor, or a combination thereof.
10. The system of claim 8 , wherein the second circuit further comprises a logic analyzer, wherein the logic analyzer is configured to generate an indicator of failure if the state-monitoring memory element fails to maintain the initial logic state when the input voltage drops below the threshold voltage.
11. The system of claim 3 , wherein the state-monitoring memory element is one of a register, a memory cell, a latch, an array of registers, or an array of memory cells.
12. The system of claim 3 , wherein the first circuit and the second circuit reside on a common integrated circuit.
13. A system, comprising:
a first circuit comprising memory elements of a memory array that are powered at an input supply voltage, wherein the input supply voltage changes over time; and
a second circuit coupled to a state-monitoring memory element of the memory array, the state-monitoring memory element being representative of a voltage sensitivity of other memory elements of the memory array, wherein the second circuit is configured to determine when the input supply voltage drops below a threshold voltage at which the state-monitory memory element operates, wherein the second circuit further comprises a logic analyzer, wherein the logic analyzer is configured to generate an indicator of failure if the state-monitoring memory element fails to maintain the initial logic state when the input voltage drops below the threshold voltage, and wherein the logic analyzer is adapted to issue a reset signal responsive to detecting a failure in the state-monitoring memory element.
14. A method, comprising:
powering a first circuit comprising a memory array of memory elements at an input supply voltage, wherein the input supply voltage changes over time; and
determining, using a second circuit comprising a state-monitoring memory element of the memory array, if the input supply voltage drops below a threshold voltage at which the state-monitoring memory element operates, the state-monitoring memory element being representative of a voltage sensitivity of other memory elements of the memory array and the threshold voltage, and wherein the determining comprises providing a degraded ground to the state-monitoring memory element.
15. The method of claim 14 , wherein said determining comprises providing a degraded input supply voltage to the state-monitoring memory element and to provide the input supply voltage to the other memory elements of the memory array, wherein the degraded input supply voltage is less than the input supply voltage.
16. The method of claim 14 , wherein the state-monitoring memory element comprises a reduced ability to retain a logic state compared to one of the other memory elements, and wherein the state-monitoring memory element is configured to lose the logic state before the one memory element when the degraded input supply voltage drops below the threshold voltage.
17. The method of claim 14 , wherein said determining comprises:
detecting a failure by the state-monitoring memory element to retain the logic state;
responsive to the detection, generating an indicator of the failure and issuing an interrupt signal to a system processor.