Current perpendicular to plane magnetoresistance read head design using a current confinement structure proximal to an air bearing surface
View Patent ↗A current to perpendicular to plane (CPP) magnetoresistance (MR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. A CPP MR read head includes a first shield, an MR sensor formed on the first shield, and a second shield contacting the MR sensor proximal to an ABS. The CPP MR read head further includes insulating material between the MR sensor and the second shield, where the insulating material is distal to the ABS to electrically isolate the MR sensor from the second shield distal to the ABS. Sense current injected from the second shield through the MR sensor and into the first shield is confined proximal to the ABS at a location where the second shield contacts the MR sensor.
1. An apparatus comprising:
a current perpendicular to plane (CPP) magnetoresistance (MR) head including a current confinement structure formed on an MR sensor that concentrates a sense current in the MR sensor proximate to an air bearing surface (ABS).
2. The apparatus of claim 1 wherein:
the current confinement structure comprises:
insulating material formed on the MR sensor distal to the ABS and not on the MR sensor proximate to the ABS.
3. The apparatus of claim 2 wherein:
the MR sensor contacts a shield along a length of between about 10 nanometers to 60 nanometers proximate to the ABS.
4. The apparatus of claim 2 wherein:
the insulating material formed on the MR sensor distal to the ABS has a thickness of about 2 to 10 nanometers.
5. The apparatus of claim 2 wherein:
the CPP MR head of claim 1 further includes an electronic lapping guide having a back edge coplanar with a front edge of the insulating material.
6. The apparatus of claim 1 wherein:
the MR sensor comprises at least one of a giant MR sensor and a tunneling MR sensor.
7. An apparatus comprising:
a current perpendicular to plane (CPP) head having a magnetoresistance (MR) sensor; and
a current confinement structure formed on the MR sensor and away from an air bearing surface (ABS) to concentrate a sense current so that a current density in the MR sensor proximate to the ABS is higher than a current density in the MR sensor distal to the ABS.
8. The apparatus of claim 7 wherein:
the current confinement structure comprises insulating material located away from the ABS and sandwiched between a shield and the MR sensor to concentrate a sense current in the MR sensor proximate to the ABS.
9. The apparatus of claim 8 wherein:
the insulating material has a thickness of about 2 to 10 nanometers.
10. The apparatus of claim 8 further comprising:
an electronic lapping guide having a back edge coplanar with a front edge of the insulating material.
11. The apparatus of claim 7 wherein:
the MR sensor comprises at least one of a giant MR sensor and a tunneling MR sensor.
12. The apparatus of claim 7 wherein:
the MR sensor contacts a shield along a length of between about 10 nanometers to 60 nanometers proximate to the ABS.
13. A head comprising:
a first shield;
a second shield;
a magnetoresistance (MR) sensor formed on the first shield; and
insulating material located away from an air bearing surface (ABS) and sandwiched between the MR sensor and the second shield, wherein the insulating material electrically isolates the MR sensor from the second shield distally from the ABS to concentrate a sense current in the MR sensor proximate to the ABS.
14. The head of claim 13 wherein:
the MR sensor contacts the second shield along a length of between about 10 nanometers to 60 nanometers proximate to the ABS.
15. The head of claim 13 wherein:
the insulating material has a thickness of about 2 to 10 nanometers.
16. The head of claim 13 further comprising:
an electronic lapping guide having a back edge coplanar with a front edge of the insulating material.
17. The head of claim 13 wherein:
the MR sensor comprises at least one of a giant MR sensor and a tunneling MR sensor.