IP Library Granted Patent US 8,636,913
Granted Patent B2
US 8,636,913 · App. 13/333,156 · Granted Jan 28, 2014

Removing residues in magnetic head fabrication

Inventors: Guomin Mao (San Jose, CA); Satyanarayana Myneni (Sunnyvale, CA)
Assignee: HGST Netherlands B.V.
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Quick Facts
Patent No.
US 8,636,913
App. No.
13/333,156
Granted
Jan 28, 2014
Kind
B2
Abstract

The present invention generally relates to a method of forming a magnetic head while ensuring residues do not negatively impact the magnetic head. In particular, when performing a RIE process to remove DLC, oxygen gas can leave residues that will negatively impact the RIE process performed on the next substrate to enter the chamber. By utilizing CO 2 rather than O 2 , the residues will not be created and therefore will not impact processing of the next substrate that enters the chamber.

Claims (44)

1. A method for making a magnetic write pole head, comprising:

forming a main pole trench in a substrate having a hardmask thereover;

depositing a ruthenium layer within the trench and over the hardmask;

depositing magnetic material over at least part of the ruthenium layer and at least partially filling the trench with the magnetic material;

removing selected portions of the magnetic material to expose the ruthenium layer;

depositing a diamond like carbon layer over the exposed ruthenium layer;

performing a chemical mechanical polishing process to remove at least a portion of the magnetic material; and

reactive ion etching the diamond like carbon layer with CO 2 to remove the diamond like carbon layer.

2. The method of claim 1 , wherein the reactive ion etching is performed at a chamber pressure of between about 8 mTorr to about 40 mTorr.

3. The method of claim 2 , wherein the reactive ion etching is performed while biasing the substrate at a power range of between about 30 watts to about 60 watts.

4. The method of claim 3 , wherein the reactive ion etching is performed while applying a source power of between about 200 watts to about 400 watts.

5. The method of claim 4 , wherein the reactive ion etching is additionally performed with an inert gas and N 2 gas.

6. The method of claim 5 , wherein the inert gas comprises helium.

7. The method of claim 6 , further comprising ion milling the ruthenium and hardmask NiCr or Cr.

8. The method of claim 7 , wherein the magnetic material comprises NiFe or CoNiFe.

9. A method for making a magnetic write pole head, comprising:

forming a main pole trench in a substrate having a hardmask thereover;

depositing a ruthenium layer within the trench and over the hardmask;

depositing magnetic material over the ruthenium layer and filling the trench with the magnetic material;

removing selected portions of the magnetic material to expose the ruthenium layer;

depositing a diamond like carbon layer over the exposed ruthenium layer;

performing a chemical mechanical polishing process to remove portions of the magnetic material; and

reactive ion etching the diamond like carbon layer with CO 2 to remove the diamond like carbon layer, wherein the reactive ion etching is performed while biasing the substrate at a power range of between about 30 watts to about 60 watts and while applying a source power of between about 200 watts to about 400 watts.

10. The method of claim 9 , wherein the reactive ion etching is additionally performed with an inert gas or with addition of N 2 gas.

11. The method of claim 10 , wherein the inert gas comprises helium.

12. The method of claim 11 , further comprising ion milling the ruthenium and hardmask NiCr or Cr.

13. The method of claim 12 , wherein the magnetic material comprises NiFe or CoNiFe.

14. A method for making a magnetic write pole head, comprising:

forming a NiCr reactive ion etching stop layer over a substrate;

forming an alumina layer over the reactive ion etching stop layer;

forming a hardmask over a portion of the alumina layer;

reactive ion etching exposed alumina to form a main pole trench in the alumina layer and expose the reactive ion etching stop layer;

depositing a ruthenium layer within the trench, over the hardmask and over the exposed reactive ion etching stop layer;

depositing NiFe or CoFeNi magnetic material over the ruthenium layer and filling the trench with the magnetic material;

removing selected portions of the magnetic material to expose the ruthenium layer;

depositing a diamond like carbon layer over the exposed ruthenium layer;

performing a chemical mechanical polishing process to remove portions of the magnetic material; and

reactive ion etching the diamond like carbon layer with CO 2 to remove the diamond like carbon layer.

15. The method of claim 14 , wherein the reactive ion etching of the diamond like carbon layer is performed at a chamber pressure of between about 8 mTorr to about 40 mTorr.

16. The method of claim 15 , wherein the reactive ion etching of the diamond like carbon layer is performed while biasing the substrate at a power range of between about 30 watts to about 60 watts.

17. The method of claim 16 , wherein the reactive ion etching of the diamond like carbon layer is performed while applying a bias of between about 200 watts to about 400 watts.

18. The method of claim 17 , wherein the reactive ion etching of the diamond like carbon layer is additionally performed with an inert gas or addition of N 2 gas.

19. The method of claim 18 , wherein the inert gas comprises helium.

20. The method of claim 19 , further comprising ion milling the ruthenium.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 6, 2016
From: HGST NETHERLANDS B.V.
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 040826/0327 →
CHANGE OF NAME Recorded Oct 25, 2012
From: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
To: HGST NETHERLANDS B.V.
Reel/Frame 029341/0777 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2012
From: MAO, GUOMIN; MYNENI, SATYANARAYANA
To: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
Reel/Frame 027468/0139 →
Continuity (1)
Related Publication 20130161185A1 · Jun 27, 2013