Semiconductor device suppressing peeling of lower electrode of capacitor
View Patent ↗A method of manufacturing a semiconductor device includes: forming a core insulating film that includes first openings, on a semiconductor substrate; forming cylindrical lower electrodes that cover sides of the first openings with a conductive film; forming a support film that covers at least an upper surface of the core insulating film between the lower electrodes; forming a mask film in which an outside of a region where at least the lower electrodes are formed is removed, by using the support film; and performing isotropic etching on the core insulating film so as to leave the core insulating film at a part of an area between the lower electrodes, after the mask film is formed.
1. A semiconductor device, the device comprising:
a plurality of lower electrodes which are cylindrical;
a core insulating film that is provided at an area between parts of the plurality of lower electrodes;
a capacitance insulating film that covers inner walls of the plurality of lower electrodes, and outer walls of the plurality of lower electrodes except for the parts of the plurality of lower electrodes covered by the core insulating film; and
an upper electrode that fills insides of the plurality of lower electrodes and gaps between the plurality of lower electrodes through the capacitance insulating film,
wherein a section in a stacking direction of the core insulating film has a mountain shape in which the bottom is wider than the top.
2. The semiconductor device according to claim 1 , wherein the device further comprises a conductive pad that is connected to bottoms of the plurality of lower electrodes.
3. A semiconductor device comprising:
a base member including a semiconductor substrate;
a first and second conductive members formed on the base member, each of the first and second conductive members being electrically connected by the base member;
a core insulating film between the first and second conductive members and having an upper surface oblique to an upper surface of the base so that the upper surface of the core insulating film is at different heights of the first and second conductive members, the core insulating film contacting with the side surface of the first and second conductive members and the base member;
a dielectric film covering the first and second conductive members and the core insulating film, the dielectric film having a greater dielectric-constant than the core insulating film; and
a conductive film between the first and second conductive members and on the core insulating film via the dielectric film.
4. A semiconductor device comprising:
a base member including a semiconductor substrate;
a first and second conductive members formed on the base member, each of the first and second conductive members being electrically connected by the base member;
a first core insulating film being buried between the first and second conductive members so that an upper surface of the first core insulating film is arranged at intermediate level of a height of the first and second conductive members, the first core insulating film contacting with the side surface of the first and second conductive members and the base member;
a dielectric film covering the first and second conductive members and the first core insulating film, the dielectric film having greater dielectric-constant than the first core insulating film;
a conductive film formed between the first and second conductive members and on the first core insulating film via the dielectric film;
a third conductive member formed on the base member, the third conductive member being placed adjacently to the first conductive member, the third conductive member being electrically connected with the first and second conductive members by the base member; and
a second core insulating film being buried between the first and third conductive members so that an upper surface of the second core insulating film is arranged at intermediate level of a height of the first and second conductive members, the second core insulating film contacting with the side surface of the first and third conductive members and the base member;
wherein the dielectric film further covers the third conductive member and the second core insulating film,
the conductive film is further formed between the first and third conductive members and on the second core insulating film via the dielectric film, and
the upper surface of the first core insulating film is arranged at different level from the upper surface of the second core insulating film.
5. The semiconductor device according to claim 4 further comprising: a support film supporting the first, second and third conductive members at upper portions of these conductive members.
6. The semiconductor device according to claim 5 , wherein opening patterns are provided with the support film and area density of the opening patterns at a peripheral portion of the support film is lager than area density of the opening patterns at a center portion of the support film.
7. The semiconductor device according to claim 5 , wherein opening patterns are provided with the support film and the opening patterns are arranged along peripheral sides of the support film.
8. The semiconductor device according to claim 4 further comprising: a capacitor being composed of the first, second and third conductive members as a lower electrode, the dielectric film, and the conductive film as an upper electrode.
9. The semiconductor device according to claim 6 further comprising:
a memory cell region in which memory cells are provided; and
a peripheral circuit region which is arranged at an outer side of the memory cell region,
wherein the support film is provided with the a portion of the peripheral circuit region.
10. The semiconductor device according to claim 9 further comprising:
a memory cell region in which memory cells are provided; and
a peripheral circuit region which is arranged at an outer side of the memory cell region,
wherein the capacitor is provided with a portion of the peripheral circuit region and the capacitor is a compensation capacitance element.