METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING SOD METHOD

1 . A method of manufacturing a semiconductor device having a substrate, comprising:

forming a liner film to cover a surface of the substrate including a trench;

washing a surface of the liner film with water;

removing remaining water after the washing;

applying a polysilazane solution to fill the trench by spin coating after the removing; and

reforming the polysilazane solution into a silicon oxide film by annealing.

2 . The method of manufacturing the semiconductor device as claimed in claim 1 , wherein the removing is performed by heating the substrate to vaporize the remaining water.

3 . The method of manufacturing the semiconductor device as claimed in claim 2 , further comprising heating the substrate after the applying and before the reforming,

wherein the substrate is heated by a common hot plate in the removing and the heating after the applying and before the reforming.

4 . The method of manufacturing the semiconductor device as claimed in claim 3 , wherein, in the removing, the substrate is heated at a higher temperature than in the heating after the applying and before the reforming.

5 . The method of manufacturing the semiconductor device as claimed in claim 1 , further comprising cooling the substrate after the removing and before the applying.

6 . The method of manufacturing the semiconductor device as claimed in claim 1 , wherein

the applying includes:

dropping the polysilazane solution on the surface of the substrate;

diffusing the polysilazane solution to the surface of the substrate; and

removing the polysilazane solution after the diffusing, and

the diffusing is performed at least 3 seconds.

7 . The method of manufacturing the semiconductor device as claimed in claim 6 , wherein

the dropping is performed while rotating the substrate at a first rotational speed,

the diffusing is performed while rotating the substrate at a second rotational speed,

the removing the polysilazane solution is performed while rotating the substrate at a third rotational speed, and

the second rotational speed is slower than the first and third rotational speeds.

8 . The method of manufacturing the semiconductor device as claimed in claim 7 , wherein the second rotational speed is 200 rpm or less, and the first and third rotational speeds are 1,000 rpm or more.

9 . A method of manufacturing a semiconductor device comprising:

pre-baking a substrate;

coating a polysilazane solution on the substrate after the pre-baking; and

post-baking the substrate after coating so as to evaporate a residual polysilazane solution.

10 . The method of manufacturing the semiconductor device as claimed in claim 9 , further comprising:

forming a liner film on the substrate; and

washing the liner film before the pre-baking.

11 . The method of manufacturing the semiconductor device as claimed in claim 9 , wherein the pre-baking is performed at higher temperature than the post-baking.

12 . The method of manufacturing the semiconductor device as claimed in claim 9 , wherein the coating includes:

dropping the polysilazane solution on the substrate while rotating the substrate at a first rotational speed;

diffusing the polysilazane solution to the substrate after dropping while rotating the substrate at a second rotational speed slower than the first rotational speed; and

removing a part of the polysilazane solution after the diffusing while rotating the substrate at a third rotational speed faster than the second rotational speed.

13 . The method of manufacturing the semiconductor device as claimed in claim 12 , wherein the diffusing is performed at least 3 seconds.

14 . The method of manufacturing the semiconductor device as claimed in claim 9 , further comprising reforming the polysilazane solution into a silicon oxide film by annealing after the post-baking.