IP Library Granted Patent US 8,503,126
Granted Patent B2
US 8,503,126 · App. 13/352,692 · Granted Aug 6, 2013

Magneto-elastic anisotropy assisted thin film structure

Inventors: Yiao-Tee Hsia (Wexford, PA); Wei Peng (Wilkinsburg, PA); Timothy J. Klemmer (Pittsburgh, PA)
Assignee: Seagate Technology LLC
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Quick Facts
Patent No.
US 8,503,126
App. No.
13/352,692
Granted
Aug 6, 2013
Kind
B2
Abstract

A method includes activating a stress-effecting layer of a thin film structure, having the stress effecting layer adjacent to a magnetic layer, to induce a magneto-elastic anisotropy in the magnetic layer.

Claims (33)

1. A method, comprising:

rotating a magnetic recording medium adjacent a data transducer, the medium comprising a stress-effecting layer and a magnetic layer; and

activating the stress-effecting layer to induce a magneto-elastic anisotropy in the magnetic layer.

2. The method of claim 1 , wherein activating the stress-effecting layer reduces a composite effective magnetic anisotropy of the magnetic layer.

3. The method of claim 1 , wherein the induced magneto-elastic anisotropy is localized to a region of the medium having an area on the order of one bit in the magnetic layer.

4. The method of claim 1 , wherein the induced magneto-elastic anisotropy occurs only when the stress-effecting layer is activated.

5. The method of claim 1 , wherein the stress-effecting layer is activated by one or more of:

heating the stress-effecting layer;

applying a mechanical force to the stress-effecting layer;

applying an electric field to the stress-effecting layer; or

applying a magnetic field to the stress-effecting layer.

6. The method of claim 1 , wherein the magnetic layer of the medium comprises one of a perpendicular magnetic recording layer, a longitudinal magnetic recording layer, or a tilted magnetic recording layer.

7. The method of claim 1 , wherein the stress-effecting layer comprises a magnetostrictive material including at least one of: iron, cobalt, and/or nickel in combination with praseodymium, terbium, samarium, holium, erbium and/or dysprosium.

8. The method of claim 1 , wherein the stress-effecting layer comprises a piezoelectric material including at least one of: quartz crystal, lithium niobates, barium titanate, lead titanate, lead zirconate-lead titanate, meta-lead niobate, and/or polyvinylidenfluoride.

9. The method of claim 1 , wherein the stress-effecting layer comprises a thermal expansion material including at least one of: a shape memory alloy, aluminum, copper, nickel, iron, silver, gold, and/or alloys thereof.

10. The method of claim 1 , wherein the stress-effecting layer comprises an electrostatic material including at least one of: silver, copper, aluminum, tungsten, iron, platinum, lead and/or alloys thereof.

11. The method of claim 1 , wherein the magnetic recording medium further comprises an additional stress-effecting layer adjacent the magnetic layer.

12. The method of claim 11 , wherein the stress-effecting layer comprises an electrostatic material having a first polarity and the additional stress-effecting layer comprises an electrostatic material having a second polarity, the second polarity being opposite the first polarity.

13. A method, comprising:

positioning a recording head adjacent to a data storage medium including a stress effecting layer adjacent to a magnetic layer;

activating the stress-effecting layer to induce a magneto-elastic anisotropy in the magnetic layer; and

applying a magnetic field to the data storage medium to write data to the data storage medium.

14. The method of claim 13 , wherein activating the stress-effecting layer reduces a composite effective magnetic anisotropy of the magnetic layer.

15. The method of claim 13 , wherein the induced magneto-elastic anisotropy is localized to a region having an area on the order of one bit in the magnetic layer.

16. The method of claim 13 , wherein the induced magneto-elastic anisotropy occurs only when the stress-effecting layer is activated.

17. The method of claim 13 , wherein the stress-effecting layer is activated by one or more of:

heating the stress-effecting layer;

applying a mechanical force to the stress-effecting layer;

applying an electric field to the stress-effecting layer; or

applying a magnetic field to the stress-effecting layer.

18. The method of claim 13 , wherein the stress-effecting layer is activated by heating the stress-effecting layer to a temperature less than a Curie temperature of the magnetic layer.

19. The method of claim 18 , wherein the stress-effecting layer is heated to a temperature less than about 200° K.

20. The method of claim 13 , wherein the data storage medium further comprises an additional stress-effecting layer adjacent the magnetic layer.

Assignments (6)
RELEASE OF SECURITY INTEREST Recorded Feb 28, 2025
From: THE BANK OF NOVA SCOTIA
To: SEAGATE TECHNOLOGY US HOLDINGS, INC.; EVAULT, INC. (F/K/A I365 INC.); SEAGATE TECHNOLOGY LLC
Reel/Frame 070363/0903 →
RELEASE OF SECURITY INTEREST Recorded Jul 23, 2024
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: SEAGATE TECHNOLOGY LLC; EVAULT INC
Reel/Frame 068457/0076 →
RELEASE OF SECURITY INTEREST Recorded May 20, 2024
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: SEAGATE TECHNOLOGY LLC; EVAULT, INC. (F/K/A I365 INC.); SEAGATE TECHNOLOGY US HOLDINGS, INC.
Reel/Frame 067471/0955 →
SECURITY AGREEMENT Recorded Oct 15, 2012
From: SEAGATE TECHNOLOGY LLC; EVAULT, INC. (F/K/A I365 INC.); SEAGATE TECHNOLOGY US HOLDINGS, INC.
To: THE BANK OF NOVA SCOTIA, AS ADMINISTRATIVE AGENT
Reel/Frame 029127/0527 →
SECOND LIEN PATENT SECURITY AGREEMENT Recorded Oct 15, 2012
From: SEAGATE TECHNOLOGY LLC; EVAULT, INC. (F/K/A I365 INC.); SEAGATE TECHNOLOGY US HOLDINGS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 029253/0585 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 18, 2012
From: HSIA, YIAO-TEE; PENG, WEI; KLEMMER, TIMOTHY J.
To: SEAGATE TECHNOLOGY LLC
Reel/Frame 027552/0148 →
Continuity (2)
Division 11265031 · Nov 2, 2005
Related Publication 20120113541A1 · May 10, 2012