Semiconductor device and fabricating method of the same
View Patent ↗Openings are formed by lithography and subsequent dry etching at the portions of a first protective film which correspond to connecting holes of second plugs which will be described later, namely at the portions thereof which align with first plugs, wherein the openings have a diameter greater than that of connecting holes by about 0.4 μm.
1. A semiconductor device comprising:
a semiconductor substrate;
a first insulating film formed above the semiconductor substrate;
a first plug including a conductive material which fills a first connecting hole formed in the first insulating film;
a capacitor construction comprising a lower electrode, an upper electrode and a dielectric film therebetween;
a first protective film formed above a top side and a sidewall of the capacitor construction;
a second insulating film formed above the first insulating film and the first protective film;
a second protective film formed above the second insulating film;
a third insulating film formed above the second protective film;
a second plug including a conductive material which fills a second connecting hole, the second connecting hole being formed in the second insulating film, the second protective film and the third insulating film, the second plug is electrically connected to the first plug;
wherein the second plug is not in contact with the first protective film and is in contact with the second protective film.
2. The semiconductor device according to claim 1 , wherein
a top side of the first insulating film is polished by CMP.
3. The semiconductor device according to claim 1 , wherein
a top side of the second insulating film is polished by CMP.
4. The semiconductor device according to claim 1 , wherein
a top side of the first insulating film is polished by CMP and a top side of the second insulating film is polished by CMP.
5. The semiconductor device according to claim 1 , wherein
the first protective film and the second protective film are made of a material containing alumina.
6. A semiconductor device comprising:
a semiconductor substrate;
a first insulating film formed above the semiconductor substrate;
a first area comprising a plurality of a first capacitor which have a lower electrode, an upper electrode and a dielectric film therebetween respectively;
a second area comprising a plurality of a second capacitor which have the lower electrode, the upper electrode and the dielectric film therebetween respectively;
a plurality of first plugs including a conductive material which fills a first connecting hole formed in the first insulating film between the first memory area and the second memory area;
a first protective film formed above a top side and a sidewall of the capacitor;
a second insulating film formed above the first insulating film and the first protective film;
a second protective film formed above the second insulating film;
a third insulating film formed above the second protective film;
a plurality of second plugs including a conductive material which fills a second connecting hole, the second connecting hole being formed in the second insulating film, the second protective film and the third insulating film, the second plug is electrically connected to the first plug;
wherein the second plug is not in contact with the first protective film and is in contact with the second protective film.
7. The semiconductor device according to claim 6 , wherein
a top side of the first insulating film is polished by CMP.
8. The semiconductor device according to claim 6 , wherein
a top side of the second insulating film is polished by CMP.
9. The semiconductor device according to claim 6 , wherein
a top side of the first insulating film is polished by CMP and a top side of the second insulating film is polished by CMP.
10. The semiconductor device according to claim 1 , wherein
the first protective film and the second protective film are made of a material containing alumina.