Semiconductor device and method of manufacturing the same
View Patent ↗Aimed at providing a highly reliable semiconductor device appropriately increased in stress at the channel region so as to improve carrier injection rate, thereby dramatically improved in transistor characteristics, and made adaptable also to recent narrower channel width, and a method of manufacturing the same, and a method of manufacturing the same, a first sidewall composed of a stress film having expandability is formed on the side faces of a gate electrode, a second sidewall composed of a film having smaller stress is formed on the first sidewall, and a semiconductor, which is a SiC layer for example, is formed as being positioned apart from the first sidewall while placing the second sidewall in between.
1. A method of manufacturing a semiconductor device, comprising:
forming a gate electrode over a semiconductor substrate while placing a gate insulating film in between;
forming a first sidewall over the side faces of the gate electrode;
forming a recess by etching the semiconductor substrate using the gate electrode and the first sidewall as a mask;
forming a semiconductor layer in the recess, the semiconductor layer including SiC, and a C content of the semiconductor layer being 1% to 3%,
removing the first sidewall after forming the semiconductor layer,
forming a second sidewall including a stress film over the side face of the gate electrode after removing the first sidewall, the second sidewall is located apart from the semiconductor layer, and
forming a third sidewall on the second sidewall.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein the semiconductor layer is formed as being positioned apart from the first sidewall while placing the second sidewall in between.
3. The method of manufacturing a semiconductor device according to claim 1 wherein the stress film has expandability.
4. The method of manufacturing a semiconductor device according to claim 1 , wherein the stress film has an absolute intrinsic stress value of 2.5 GPa or larger and 4.0 GPa or smaller.
5. The method of manufacturing a semiconductor device according to claim 1 , wherein the second sidewall includes a film having stress smaller than that of the first sidewall.
6. A method of manufacturing a semiconductor device, comprising:
forming a gate electrode over a semiconductor substrate while placing a gate insulating film in between;
forming a first sidewall over the side faces of the gate electrode;
forming a recess by etching the semiconductor substrate using the gate electrode and the first sidewall as a mask;
forming a semiconductor layer in the recess;
removing the first sidewall;
forming a second sidewall including stress film over the side faces of the gate electrode; and
forming a third sidewall on the second sidewall,
wherein the semiconductor layer is positioned apart from the the second sidewall while placing the third sidewall in between.
7. The method of manufacturing a semiconductor device according to claim 6 , wherein the third sidewall includes a film having stress smaller than that of the second sidewall.