Semiconductor device and method of forming the same
A semiconductor device includes a semiconductor device may include, but is not limited to, a semiconductor substrate, an isolation electrode, a gate electrode, a gate insulating film, and a first insulating film. The semiconductor substrate has a first groove and a second groove. An isolation electrode is positioned in the first groove. The gate electrode is positioned in the second groove. The gate insulating film is adjacent to the gate electrode. The first insulating film is adjacent to the isolation electrode. The isolation electrode is greater in threshold voltage than the gate electrode.
1. A semiconductor device comprising:
a semiconductor substrate having a first groove and a second groove;
an isolation electrode in the first groove;
a gate electrode in the second groove;
a gate insulating film adjacent to the gate electrode; and
a first insulating film adjacent to the isolation electrode,
the isolation electrode being greater in threshold voltage than the gate electrode.
2. The semiconductor device according to claim 1 , wherein the first insulating film underneath the isolation electrode is thicker than the gate insulating film underneath the gate electrode.
3. The semiconductor device according to claim 2 , wherein a bottom of the first insulating film is lower in level than a bottom of the gate insulating film.
4. The semiconductor device according to claim 2 , wherein the first insulating film includes a bottom portion and side portions, the bottom portion is positioned underneath the bottom of the isolation electrode, the side portions are positioned adjacent to side surfaces of the isolation electrode, and the bottom portion of the first insulating film is thicker than the side portions of the first insulating film.
5. The semiconductor device according to claim 4 , wherein the bottom portion of the first insulating layer has a multi-layered structure.
6. The semiconductor device according to claim 1 , wherein a bottom of the isolation electrode is substantially the same in level as a bottom of the gate electrode.
7. The semiconductor device according to claim 1 , the semiconductor substrate further comprises:
a first diffusion region underneath the first groove, the first diffusion region having the same conductivity type as the semiconductor substrate, the first diffusion region being greater in impurity concentration than other portion of the semiconductor substrate.
8. The semiconductor device according to claim 7 , wherein the gate insulating film and the first insulating films are substantially the same in thickness as each other.
9. The semiconductor device according to claim 1 , the semiconductor substrate further comprises:
a second diffusion region underneath the second groove, the second diffusion region having the same conductivity type as the semiconductor substrate, the second diffusion region being lower in impurity concentration than other portion of the semiconductor substrate.
10. The semiconductor device according to claim 9 , wherein the gate insulating film and the first insulating films are substantially the same in thickness as each other.
11. The semiconductor device according to claim 1 , wherein the semiconductor substrate includes a first portion underneath the first groove and a second portion underneath the second groove, the first portion is higher in impurity concentration than the second portion.
12. The semiconductor device according to claim 11 , wherein the gate insulating film and the first insulating films are substantially the same in thickness as each other.
13. The semiconductor device according to claim 1 , further comprising:
a third diffusion region in the semiconductor substrate, the third diffusion region being between the first and second grooves.
14. The semiconductor device according to claim 13 , further comprising:
a fourth diffusion region adjacent to the second groove, the second groove being between the third and fourth diffusion regions, the fourth diffusion region being greater in impurity concentration than the third diffusion region, the fourth diffusion region being deeper in bottom level than the third diffusion region.
15. The semiconductor device according to claim 14 , wherein the fourth diffusion region is shallower in bottom level than the second groove.
16. The semiconductor device according to claim 15 , further comprising:
a bit line coupled to the fourth diffusion region; and
a capacitor coupled to the third diffusion region.
17. A semiconductor device comprising:
a semiconductor substrate having first and second grooves;
an isolation electrode in the first groove;
a gate electrode in the second groove;
a gate insulating film between the semiconductor substrate and the gate electrode; and
a first insulating film extending at least beneath the isolation electrode, the first insulating film beneath the isolation electrode being thicker than the gate insulating film beneath the gate electrode.
18. The semiconductor device according to claim 17 , further comprising:
a third diffusion region in the semiconductor substrate, the third diffusion region being between the first and second grooves;
a fourth diffusion region adjacent to the second groove, the second groove being between the third and fourth diffusion regions, the fourth diffusion region being greater in impurity concentration than the third diffusion region, the fourth diffusion region being deeper in bottom level than the third diffusion region, the fourth diffusion region being shallower in bottom level than the second groove;
a bit line coupled to the fourth diffusion region; and
a capacitor coupled to the third diffusion region.
19. A semiconductor device comprising:
a semiconductor substrate having first and second grooves, the semiconductor substrate including a first portion underneath the first groove and a second portion underneath the second groove, the first portion being higher in impurity concentration than the second portion;
an isolation electrode in the first groove;
a gate electrode in the second groove;
a gate insulating film adjacent to the gate electrode; and
a first insulating film adjacent to the isolation electrode.
20. The semiconductor device according to claim 19 , further comprising:
a third diffusion region in the semiconductor substrate, the third diffusion region being between the first and second grooves;
a fourth diffusion region adjacent to the second groove, the second groove being between the third and fourth diffusion regions, the fourth diffusion region being greater in impurity concentration than the third diffusion region, the fourth diffusion region being deeper in bottom level than the third diffusion region, the fourth diffusion region being shallower in bottom level than the second groove;
a bit line coupled to the fourth diffusion region; and
a capacitor coupled to the third diffusion region.