IP Library › Granted Patent US 8,633,036
Granted Patent B2
US 8,633,036 · App. 13/412,939 · Granted Jan 21, 2014

Manufacturing method of ferroelectric capacitor

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Quick Facts
Patent No.
US 8,633,036
App. No.
13/412,939
Granted
Jan 21, 2014
Kind
B2
Abstract

Provided is a ferroelectric memory including a silicon substrate, a transistor formed on the silicon substrate, and a ferroelectric capacitor formed above the transistor. The ferroelectric capacitor includes a lower electrode, a ferroelectric film formed on the lower electrode, an upper electrode formed on the ferroelectric film, and a metal film formed on the upper electrode.

Claims (18)

1. A method of manufacturing a ferroelectric capacitor, comprising:

forming a lower electrode film;

forming a ferroelectric film over the lower electrode film;

performing a first anneal of the ferroelectric film;

forming a first upper electrode film over the ferroelectric film after the first anneal;

performing a second anneal of the ferroelectric film to crystallize the ferroelectric film after the forming of the first upper electrode film;

performing a third anneal of the first upper electrode film in an oxygen-containing atmosphere after the second anneal; and

forming a second upper electrode film over the first upper electrode film after the third anneal,

wherein the third anneal is performed in a higher oxygen concentration than an oxygen concentration in the second anneal.

2. The method of manufacturing a ferroelectric capacitor according to claim 1 , wherein

the third anneal is performed in a lower substrate temperature than a substrate temperature of the second anneal.

3. The method of manufacturing a ferroelectric capacitor according to claim 1 , further comprising:

performing a fourth anneal of the second upper electrode film in an oxygen-containing atmosphere.

4. The method of manufacturing a ferroelectric capacitor according to claim 1 , wherein the first upper electrode film is formed by a sputtering method using, as a target, a metal which is a same metal as that comprising the first upper electrode film.

5. The method of manufacturing a ferroelectric capacitor according to claim 1 , further comprising:

forming a metal film over the second upper electrode film.

6. The method of manufacturing a ferroelectric capacitor according to claim 1 , wherein any of the first upper electrode film and the second upper electrode film is an iridium oxide film.

7. The method of manufacturing a ferroelectric capacitor according to claim 1 , wherein the second upper electrode film is formed by a sputtering method using, as a target, a metal which is a same metal as that comprising the second upper electrode film.