Semiconductor device
A semiconductor device includes, a gate insulating film, a gate electrode, a source/drain region, and a Si mixed crystal layer in the source/drain region. The Si mixed crystal layer includes a first Si mixed crystal layer that includes impurities with a first concentration, a second Si mixed crystal layer formed over the first Si mixed crystal layer and that includes the impurities with a second concentration higher than the first concentration, and a third Si mixed crystal layer formed over the second Si mixed crystal layer and that includes the impurities with a third concentration lower than the second concentration.
1. A semiconductor device manufacturing method comprising:
forming a gate insulating film over a first conductive type silicon substrate;
forming a gate electrode over the gate insulating film;
forming a first sidewall spacer at a sidewall of the gate electrode;
implanting a first impurity with a second conductive type to the silicon substrate by using the first sidewall spacer as a mask;
forming a second sidewall spacer at the first sidewall spacer;
implanting a third impurity with the second conductive type to the silicon substrate by using the second sidewall spacer as a mask to form a second diffusion region over the silicon substrate;
forming a trench portion in the silicon substrate by etching the silicon substrate by using the sidewall spacer as a mask;
forming a first Si mixed crystal layer that includes a second impurity with a first concentration in the trench portion;
forming a second Si mixed crystal layer that includes the second impurity with a second concentration higher than the first concentration over the first Si mixed crystal layer; and
forming a third Si mixed crystal layer that includes the second impurity with a third concentration lower than the second concentration over the second Si mixed crystal layer.
2. The semiconductor device manufacturing method according to claim 1 , wherein the forming the second diffusion region over the silicon substrate being after forming the second sidewall spacer and prior to forming the trench portion.
3. The semiconductor device manufacturing method according to claim 1 further comprising: forming a silicide layer over the third Si mixed crystal layer.
4. The semiconductor device manufacturing method according to claim 1 , wherein the first conductive type is an n-type, the second conductive type is a p-type, and the Si mixed crystal layer is a p-type SiGe layer.
5. The semiconductor device manufacturing method according to claim 1 , wherein the first conductive type is a p-type, the second conductive type is an n-type, and the Si mixed crystal layer is one of an n-type SiC layer and an n-type SiGeC layer.