Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with multilayer reference layer including a Heusler alloy
View Patent ↗A current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor has a multilayer reference layer containing a Heusler alloy. The multilayer reference layer may be a simple pinned layer or the AP2 layer of an antiparallel (AP)-pinned structure. The multilayer reference layer is formed of a crystalline non-Heusler alloy ferromagnetic layer on either an antiferromagnetic layer (in a simple pinned structure) or an antiparallel coupling (APC) layer (in an AP-pinned structure), a Heusler alloy layer adjacent the sensor's nonmagnetic electrically conducting spacer layer, and an intermediate substantially non-crystalline X-containing layer between the crystalline non-Heusler alloy layer and the Heusler alloy layer. The element X is selected from one or more of tantalum (Ta), hafnium (Hf), niobium (Nb) and boron (B).
1. A magnetoresistive sensor capable of sensing external magnetic fields when a sense current is applied perpendicular to the planes of the layers in the sensor, the sensor comprising:
a substrate;
an antiferromagnetic layer comprising Mn on the substrate;
a multilayer reference layer comprising a non-Heusler alloy ferromagnetic layer on and antiferromagnetically exchange coupled to the antiferromagnetic layer and having a fixed in-plane magnetization direction, a Heusler alloy layer having a fixed in-plane magnetization direction parallel to the magnetization direction of the non-Heusler alloy layer, and a substantially non-crystalline X-containing layer between the non-Heusler alloy layer and the Heusler alloy layer wherein X is selected from one or more of Ta, Hf, Nb and B;
an electrically conductive spacer layer on and in contact with the Heusler alloy layer; and
a free layer on the spacer layer and having an in-plane magnetization direction substantially free to rotate in the presence of an external magnetic field.
2. The sensor of claim 1 wherein the antiferromagnetic layer comprises an IrMn alloy.
3. The sensor of claim 1 wherein the non-crystalline X-containing layer consists essentially of Ta.
4. The sensor of claim 1 wherein the non-crystalline X-containing layer comprises a ferromagnetic alloy selected from alloys of CoX, FeX, CoFeX, and CoFeZrX.
5. The sensor of claim 1 wherein the non-crystalline X-containing layer comprises a bilayer of an amorphous ferromagnetic first layer selected from alloys of CoX, FeX, CoFeX and CoFeZrX, where X is one or more of Ta, Hf, Nb and B, on and in contact with the non-Heusler alloy layer and a second layer consisting essentially of one of Ta, Hf, Nb and B on and in contact with said first layer.
6. The sensor of claim 1 wherein the non-Heusler alloy layer comprises a layer of an alloy consisting essentially of Co and Fe.
7. The sensor of claim 1 wherein the layer of Heusler alloy is formed of a material selected from Co 2 MnX (where X is one or more of Ge, Si, Sn, Ga or Al) and Co 2 FeZ (where Z is one or more of Ge, Si, Al, Sn or Ga).
8. The sensor of claim 1 wherein the sensor is a magnetoresistive read head for reading magnetically recorded data from tracks on a magnetic recording medium, and wherein the substrate is a first shield formed of magnetically permeable material.
9. A current-perpendicular-to-the-plane (CPP) magnetoresistive read head comprising:
a substrate;
an antiferromagnetic layer comprising Mn on the substrate;
a multilayer reference layer on the antiferromagnetic layer, the multilayer reference layer comprising a non-Heusler alloy ferromagnetic layer in contact with the antiferromagnetic layer, a substantially non-crystalline X-containing layer on and in contact with the non-Heusler alloy layer wherein X is selected from one or more of Ta, Hf, Nb, and B and a Heusler alloy layer on and in contact with the X-containing layer and having an in-plane magnetization direction fixed by being pinned to the antiferromagnetic layer, wherein the non-crystalline X-containing layer comprises a bilayer of an amorphous ferromagnetic first layer selected from alloys of CoX, FeX, CoFeX and CoFeZrX, where X is one or more of Ta, Hf, Nb and B, on and in contact with the non-Heusler alloy layer and a second layer consisting essentially of one of Ta, Hf, Nb and B on and in contact with said first layer;
an electrically conductive spacer layer on the Heusler alloy layer of the multilayer reference layer; and
a free layer on the spacer layer and having an in-plane magnetization direction substantially free to rotate in the presence of an external magnetic field.
10. The head of claim 9 wherein said first layer is a CoFeBTa alloy and said second layer consists essentially of Ta.
11. The head of claim 9 wherein the non-Heusler alloy layer comprises a layer of an alloy consisting essentially of Co and Fe.
12. The head of claim 9 wherein the layer of Heusler alloy is formed of a material selected from Co 2 MnX (where X is one or more of Ge, Si, Sn, Ga or Al) and Co 2 FeZ (where Z is one or more of Ge, Si, Al, Sn or Ga).
13. A current-perpendicular-to-the-plane (CPP) magnetoresistive read head comprising:
a substrate;
an antiferromagnetic layer on the substrate;
an antiparallel (AP) pinned structure on the antiferromagnetic layer comprising a first AP-pinned (AP1) ferromagnetic layer on the antiferromagnetic layer and having an in-plane magnetization direction pinned by the antiferromagnetic layer, an AP coupling (APC) layer on the AP1 layer, and a second AP-pinned (AP2) ferromagnetic reference layer on the APC layer and having an in-plane magnetization direction substantially antiparallel to the magnetization direction of the AP1 layer;
wherein the AP2 layer is a multilayer reference layer comprising a non-Heusler alloy ferromagnetic layer in contact with the APC layer, a substantially non-crystalline X-containing layer on and in contact with the non-Heusler alloy layer wherein X is selected from one or more of Ta, Hf, Nb and B, and a Heusler alloy layer on and in contact with the X-containing layer;
an electrically conductive spacer layer on the Heusler alloy layer of the multilayer reference layer; and
a free layer on the spacer layer and having an in-plane magnetization direction substantially free to rotate in the presence of an external magnetic field.
14. The head of claim 13 wherein the non-crystalline X-containing layer consists essentially of Ta.
15. The head of claim 13 wherein the non-crystalline X-containing layer comprises a ferromagnetic alloy selected from alloys of CoX, FeX, CoFeX and CoFeZrX, where X is one or more of Ta, Hf, Nb and B.
16. The head of claim 13 wherein the non-crystalline X-containing layer comprises a bilayer of an amorphous ferromagnetic first layer selected from alloys of CoX, FeX, CoFeX and CoFeZrX, where X is one or more of Ta, Hf, Nb and B, on and in contact with the non-Heusler alloy layer and a second layer consisting essentially of one of Ta, Hf, Nb and B on and in contact with said first layer.
17. The head of claim 13 wherein the non-Heusler alloy layer comprises a layer of an alloy consisting essentially of Co and Fe.
18. The head of claim 13 wherein the layer of Heusler alloy is formed of a material selected from Co 2 MnX (where X is one or more of Ge, Si, Sn, Ga or Al) and Co 2 FeZ (where Z is one or more of Ge, Si, Al, Sn or Ga).