METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
A method for forming a semiconductor device includes the following processes. A first semiconductor chip and a second semiconductor chip are stacked to form a stacked structure. A gap between the first and second semiconductor chips of the stacked structure is filled with a filler. A temperature of the stacked first and second semiconductor chips is kept more than room temperature from the stacking to the filing.
1 . A method of manufacturing a semiconductor device, the method comprising:
stacking a first semiconductor chip and a second semiconductor chip to form a stacked structure;
filing a gap between the first and second semiconductor chips of the stacked structure with a filler; and
keeping a temperature of the stacked structure more than a room temperature from the stacking to the filing.
2 . The method according to claim 1 , wherein keeping the temperature of the stacked structure comprises:
housing the stacked structure in a heat-insulating tray.
3 . The method according to claim 1 , wherein keeping the temperature of the stacked structure comprises:
keeping the temperature of the stacked structure in a rage of 80° C. to 100° C.
4 . The method according to claim 1 , further comprising:
forming a passivation film over the first semiconductor chip and the second semiconductor chip before stacking the first semiconductor chip and the second semiconductor chip.
5 . The method according to claim 1 , wherein stacking the first semiconductor chip and the second semiconductor chip comprises:
heating the first semiconductor chip and the second semiconductor chip while applying a load to the first semiconductor chip and the second semiconductor chip.
6 . The method according to claim 1 , further comprising:
hardening the filler by heating the first semiconductor chip and the second semiconductor chip.
7 . The method according to claim 1 , further comprising:
stacking the stacked structure on a wiring board; and
sealing the stacked structure and the wiring board with a resin.
8 . The method according to claim 1 , wherein filing the gap comprises:
heating the stacked structure while the gap between the first and second semiconductor chips of the stacked structure is filled with the filler.
9 . A method of manufacturing a semiconductor device, the method comprising:
electrically coupling a plurality of semiconductor chips to each other;
keeping a temperature of the plurality of semiconductor chips more than a room temperature during and after electrically coupling the plurality of semiconductor chips to each other; and
filing gaps between the plurality of semiconductor chips with a filler while heating the plurality of semiconductor chips immediately after the keeping.
10 . The method according to claim 9 , wherein keeping the temperature of the plurality of semiconductor chips comprises:
housing the plurality of semiconductor chips in a heat-insulating tray.
11 . The method according to claim 9 , wherein keeping a temperature of the plurality of semiconductor chips comprises:
keeping the temperature of the plurality of semiconductor chips in a range of 80° C. to 100° C.
12 . The method according to claim 9 , further comprising:
forming a passivation film over the plurality of semiconductor chips before electrically coupling the plurality of semiconductor chips.
13 . The method according to claim 9 , wherein electrically coupling the plurality of semiconductor chips to each other comprises:
heating the plurality of semiconductor chips while applying a load to the plurality of semiconductor chips.
14 . The method according to claim 9 , further comprising:
hardening the filler by heating the plurality of semiconductor chips.
15 . The method according to claim 9 , further comprising:
stacking the plurality of semiconductor chips on a wiring board; and
sealing the plurality of semiconductor chips and the wiring board with a resin.
16 . A method of manufacturing a semiconductor device, the method comprising:
forming a stacked structure including first and second substrates stacked with one another; and
filling a gap between the first and second substrates with an underfilling material while keeping a temperature of the stacked structure higher than a room temperature from the forming to the filling.
17 . The method according to claim 16 , wherein each of the first and second substrates is a semiconductor chip.
18 . The method according to claim 16 , wherein the second substrate has a size that is different from the first substrate.
19 . The method according to claim 16 , wherein the keeping the temperature of the stacked structure is kept in a range of 80° C. to 100° C.
20 . The method according to claim 16 , further comprising:
mounting the stacked structure on a wiring board; and
forming a sealing resin on the wiring board to cover the stacked structure.