Semiconductor device and fabrication method

1. A method for fabricating a semiconductor device, the method comprising:

forming a gate electrode on a first region of a semiconductor substrate formed of a first semiconductor, forming a first side wall insulating film on a first side surface of the gate electrode and forming a second side wall insulating film on a second side surface of the gate electrode;

forming a first opening part and a second opening part with the first region interposed therebetween;

forming a first insulating film on side surfaces and a bottom surface of the first opening part and also on side surfaces and a bottom surface of the second opening part;

removing the first insulating film while allowing at least parts of the first insulating film to remain on the side surfaces of the first and the second opening parts;

forming a first semiconductor layer and a second semiconductor layer in the first opening part and the second opening part, respectively, the first and the second semiconductor layers being formed of a second semiconductor which has etching selectivity to the first semiconductor;

removing the first insulating film from the side surface of the first opening part and also from the side surface of the second opening part;

forming a third semiconductor layer and a fourth semiconductor layer on the first semiconductor layer and the second semiconductor layer, respectively, after removing the first insulating film from the side surface of the first opening part and also from the side surface of the second opening part, the third and the fourth semiconductor layers being formed of the first semiconductor;

exposing respective parts of the first semiconductor layer and the second semiconductor layer after forming the third semiconductor layer and the fourth semiconductor layer on the first semiconductor layer and the second semiconductor layer, respectively;

removing the first and second semiconductor layers to form a third opening part and a fourth opening part after exposing the respective parts of the first semiconductor layer and the second semiconductor layer;

forming a second insulating film in the third opening part and the fourth opening part; and

implanting an impurity element in the third semiconductor layer and the fourth semiconductor layer to form a first diffusion region and a second diffusion region, respectively.

2. The method as claimed in claim 1 , further comprising:

performing isotropic etching on the first opening part and the second opening part to depress the side surfaces of the first and the second opening parts, the isotropic etching being performed after forming the first and the second opening parts and before forming the first insulating film.

3. The method as claimed in claim 1 , wherein

forming the first and the second opening parts includes:

forming a first device isolation trench and a second device isolation trench in the semiconductor substrate;

forming a third insulating film in each of the first device isolation trench and the second device isolation trench to form a first device isolation region and a second isolation region, respectively; and

forming the first opening part and the second opening part to contact with the first device isolation region and the second isolation region, respectively, wherein

exposing the first and the second semiconductor layers includes:

removing the third insulating film from the first device isolation region and the second isolation region to form respective openings in the first device isolation trench and the second device isolation trench such that the first and the second semiconductor layers are exposed, and wherein

forming the second insulating film in the third opening part and the fourth opening part includes:

forming, after removing the third insulating film from the first device isolation trench and the second device isolation trench to form openings of the first device isolation trench and the second device isolation trench, the second insulating film in the openings of the first device isolation trench and the second device isolation trench.

4. The method as claimed in claim 1 , wherein

exposing the respective parts of the first semiconductor layer and the second semiconductor layer includes:

covering the third semiconductor layer and the fourth semiconductor layer with a mask pattern; and

etching the third semiconductor layer and the fourth semiconductor layer to form the first device isolation trench and the second device isolation trench, respectively, such that the first and the second semiconductor layers are exposed, and wherein

forming the second insulating film in the third opening part and the fourth opening part includes:

forming the second insulating film in the first device isolation trench and the second device isolation trench.

5. The method as claimed in claim 1 , wherein

the first insulating film is a silicon oxide film formed by one of a thermal oxidation process, a plasma oxidation process and a chemical vapor deposition process.

6. The method as claimed in claim 1 , further comprising:

forming a fifth semiconductor layer and a sixth semiconductor layer on the first semiconductor layer and the second semiconductor layer, respectively, before removing the first insulating film from the side surface of the first opening part and also from the side surface of the second opening part, the first insulating film being removed from the side surface of the first opening part and the side surface of the second opening part after forming the first semiconductor layer and the second semiconductor layer.

7. The method as claimed in claim 1 , further comprising:

etching the bottom surfaces of the first opening part and the second opening part before forming the first semiconductor layer and the second semiconductor layer, the first semiconductor layer and the second semiconductor layer being formed after removing the first insulating layer from the bottom surfaces of the first opening part and the second opening part.

8. The method as claimed in claim 7 , wherein

etching the bottom surfaces of the first opening part and the second opening part includes:

anisotropically etching the bottom surfaces of the first opening part and the second opening part; and

isotropically etching the bottom surfaces of the first opening part and the second opening part after anisotropically etching the bottom surfaces of the first opening part and the second opening part.

9. The method as claimed in claim 1 , wherein

removing the first insulating film from the side surface of the first opening part and from the side surface of the second opening part includes:

removing the first insulating film from the side surface of the first opening part and from the side surface of the second opening part, excluding at least a part between the first semiconductor layer and the side surface of the first opening part and at least apart between the second semiconductor layer and the side surface of the second opening part.

10. The method as claimed in claim 1 , wherein

forming the first and the second opening parts includes:

etching the semiconductor substrate utilizing the first side wall insulating film and the second side wall insulating film as a mask.

11. The method as claimed in claim 1 , further comprising:

forming a gate electrode in the first region after forming the second insulating film in the third opening part and the fourth opening part; and

forming the first side wall insulating film on the first side surface of the gate electrode and the second side wall insulating film on the second side surface of the gate electrode.