Magnetoresistive device with enhanced pinned layer

1. A device comprising:

a pinned layer having a fixed magnetic moment;

a magnetic stabilizer configured to induce a magnetic field with a substantially similar magnetic orientation as the pinned layer, wherein the pinned layer has greater cross-sectional dimension than a free layer; and

a separating layer positioned between the free layer and the pinned layer.

2. The device of claim 1 , wherein the magnetic stabilizer comprises a conductor configured to conduct a current to induce the magnetic field.

3. The device of claim 2 , wherein the conductor conducts a DC current to induce the magnetic field with the substantially similar magnetic orientation as the pinned layer.

4. The device of claim 1 , wherein the free layer has a rotatable magnetic moment.

5. The device of claim 1 , wherein the separating layer having a nonmagnetic conductor that spaces a free layer has a rotatable magnetic moment from the pinned layer.

6. The device of claim 1 , wherein the separating layer has an insulating barrier that enables electron tunneling between a free layer and the pinned layer.

7. The device of claim 1 , wherein the pinned layer has in-plane anisotropy.

8. The device of claim 1 , wherein the pinned layer has a greater lateral dimension than the free layer having a rotatable magnetic moment.

9. A device comprising:

a free layer;

a pinned layer having a fixed magnetic moment;

a conductor in proximity to the pinned layer, wherein the conductor is configured to conduct electrical current to induce a magnetic field with a substantially similar magnetic orientation as the pinned layer, wherein the pinned layer has a greater lateral dimension than the free layer; and

a separating layer positioned between the free layer and the pinned layer.

10. The device of claim 9 , wherein the conductor comprises a first conductor and further comprising a second conductor spaced from the surface of the pinned layer on a side farthest from the first conductor.

11. The device of claim 10 , wherein the second conductor is configured to conduct current in an opposite direction from the first conductor to induce a magnetic field with the substantially similar magnetic orientation as the pinned layer.

12. The device of claim 9 , wherein the device is configured to be used as a magnetoresistive random access memory element.

13. The device of claim 9 , wherein the pinned layer has a greater cross-sectional dimension than the free layer.

14. The device of claim 9 , wherein the device is configured to be used as a magnetic sensor element.

15. The device of claim 9 , wherein the conductor conducts a DC current to induce the magnetic field.

16. The device of claim 9 , wherein the free layer has a rotatable magnetic moment.

17. A device comprising:

a free layer;

a pinned layer having a fixed magnetic moment, wherein the pinned layer has a greater lateral dimension than the free layer;

a separating layer positioned between and in contact with the free layer and the pinned layer; and

a magnetic stabilizer configured to induce a magnetic field with a substantially similar magnetic orientation as the pinned layer.

18. The device of claim 17 , wherein the magnetic stabilizer is spaced from the surface of the pinned layer on a side farthest from the free layer.

19. The device of claim 17 , wherein the magnetic stabilizer conducts a DC current to induce the magnetic field in the substantially similar magnetic orientation as the pinned layer.

20. The device of claim 17 , wherein the free layer has a rotatable magnetic moment.