Semiconductor device having capacitor capable of reducing additional processes and its manufacture method

1. A semiconductor device comprising:

a first interlayer insulating film formed over a semiconductor substrate;

a first capacitor recess and a wiring trench formed through the first interlayer insulating film;

a lower electrode embedded in the first capacitor recess;

a first wiring embedded in the wiring trench;

a first etching stopper film disposed over the first interlayer insulating film;

a second interlayer insulating film disposed over the first etching stopper film and made of insulating material having an etching resistance different from an etching resistance of the first etching stopper film;

a first hole formed through the second interlayer insulating film and the first etching stopper film and reaching an upper surface of the first wiring;

a first conductor formed in the first hole;

a second capacitor recess formed through the second interlayer insulating film and reaching the first etching stopper film, the second capacitor recess at least partially overlapping the lower electrode as viewed in plan;

an upper electrode including a first barrier metal film and a first conductive film, the first barrier metal film formed over a bottom surface and a side surface of the second capacitor recess and an upper surface of the via layer insulating film continuously, the first conductive film being deposited on the first barrier metal film and being continuous from a portion filing the second capacitor recess to a portion deposited on the barrier metal film covering the partial upper surface of the via layer insulating film, the upper electrode and the lower electrode constituting a capacitor comprising the first etching stopper film as a capacitor dielectric film;

a second wiring formed over the second interlayer insulating film and connected to the first conductor, the second wiring including a second barrier metal film and a second conductive film, the second barrier metal film being deposited on the first conductor and made of a same material as the first barrier metal film, and the second conductive film being deposited on the second barrier metal film and made of a same material as the first conductive film;

a pad formed over the second interlayer insulating film, the pad having a same lamination structure as a lamination structure of the upper electrode;

a cover film formed over the second interlayer insulating film, the cover film covering the upper electrode, the second wiring and the pad; and

an opening formed through the cover film, a part of the pad being exposed at a bottom of the opening.

2. A semiconductor device comprising:

a first interlayer insulating film formed over a semiconductor substrate;

a first capacitor recess and a wiring trench formed through the first interlayer insulating film;

a lower electrode embedded in the first capacitor recess;

a first wiring embedded in the wiring trench;

a first etching stopper film disposed over the first interlayer insulating film;

a second interlayer insulating film disposed over the first etching stopper film and made of insulating material having an etching resistance different from an etching resistance of the first etching stopper film;

a first hole formed through the second interlayer insulating film and the first etching stopper film and reaching an upper surface of the first wiring;

a first conductor formed in the first hole;

a second capacitor recess formed through the second interlayer insulating film and reaching the first etching stopper film, the second capacitor recess at least partially overlapping the lower electrode as viewed in plan;

an upper electrode including a first barrier metal film and a first conductive film, the first barrier metal film formed over a bottom surface and a side surface of the second capacitor recess and an upper surface of second interlayer layer insulating film continuously, the first conductive film being deposited on the first barrier metal film and being continuous from a portion filing the second capacitor recess to a portion deposited on the barrier metal film covering the partial upper surface of the via layer insulating film, the upper electrode and the lower electrode constituting a capacitor comprising the first etching stopper film as a capacitor dielectric film;

a second wiring formed over the second interlayer insulating film and connected to the first conductor, the second wiring including a second barrier metal film and a second conductive film, the second barrier metal film being deposited on the first conductor and made of a same material as the first barrier metal film, and the second conductive film being deposited on the second barrier metal film and made of a same material as the first conductive film; and

a cover film covering upper surfaces and side surfaces of the upper electrode and the second wiring.

3. The semiconductor device according to claim 1 , wherein the cover film covers an upper surface of the upper electrode and a side surface of the upper electrode located on the second interlayer insulating film.

4. The semiconductor device according to claim 3 , wherein the side surface of the upper electrode is contact with the cover film.

5. The semiconductor device according to claim 2 , wherein the cover film covers an upper surface of the upper electrode and a side surface of the upper electrode located on the second interlayer insulating film.

6. The semiconductor device according to claim 5 , wherein the side surface of the upper electrode is contact with the cover film.