Method of manufacturing a semiconductor device
View Patent ↗A semiconductor device includes a semiconductor substrate, a gate insulating film formed over the semiconductor substrate, a gate electrode formed on the gate insulating film, a first semiconductor layer which is embedded into a portion on both sides of the gate electrode in the semiconductor substrate, and which includes Si and a 4B group element other than Si, and a second semiconductor layer which is embedded into the portion on both sides of the gate electrode in the semiconductor substrate, so as to be superposed on the first semiconductor layer, and which includes Si and a 4B group element other than Si, wherein the gate electrode is more separated from an end of the first semiconductor layer than from an end of the second semiconductor layer.
1. A method of manufacturing a semiconductor device, the method comprising:
forming a gate insulating film over a semiconductor substrate, and a gate electrode on the gate insulating film;
forming a first side wall on a side surface of the gate electrode;
forming a first recessed portion in the semiconductor substrate by using the gate electrode and the first side wall as a mask;
forming a second side wall on the first side wall;
forming a second recessed portion in the semiconductor substrate by using the gate electrode and the second side wall as a mask;
subsequently forming a first semiconductor layer in the second recessed portion;
after forming the first semiconductor layer, removing the second side wall;
after removing the second side wall, forming a second semiconductor layer in the first recessed portion;
wherein the first semiconductor layer and the second semiconductor layer comprise Si and a 4B group element other than Si, and
wherein a mole fraction of the 4B group element other than Si in the second semiconductor layer is higher than a mole fraction of the 4B group element other than Si in the first semiconductor layer.
2. The method according to claim 1 ,
wherein the 4B group element other than Si in the first semiconductor layer and the 4B group element other than Si in the second semiconductor layer are Ge or C.
3. The method according to claim 1 , further comprising:
forming, after forming the first semiconductor layer, a third semiconductor layer on the first semiconductor layer before forming the second semiconductor layer.
4. The method according to claim 3 ,
wherein the third semiconductor layer comprises Si or comprises Si and a 4B group element other than Si, and
wherein a mole fraction of the 4B group element other than Si in the third semiconductor layer is lower than the mole fraction of the 4B group element other than Si in the first semiconductor layer.
5. The method according to claim 4 , wherein the 4B group element other than Si in the second semiconductor layer is Ge or C.
6. The method according to claim 3 , further comprising:
forming, after forming of the second semiconductor layer, a fourth semiconductor layer on the second semiconductor layer.
7. The method according to claim 6 ,
wherein the fourth semiconductor layer comprises Si or comprises Si and a 4B group element other than Si, and
wherein a composition ratio of the 4B group element other than Si in the fourth semiconductor layer is lower than a composition of the 4B group element other than Si in the first semiconductor layer.
8. The method according to claim 7 ,
wherein the 4B group element other than Si in the second semiconductor layer is Ge or C.
9. The method according to claim 1 ,
wherein the mole fraction of the 4B group element other than Si in the second semiconductor layer is 0.20<x≦0.30 and the mole fraction of the 4B group element other than Si in the first semiconductor layer is 0.15≦x≦0.20, and
wherein the 4B group element other than Si in the first semiconductor layer and the 4B group element other than Si in the second semiconductor layer are Ge.