DUAL SINGLE SIDED SPUTTER CHAMBERS WITH SUSTAINING HEATER

1 . A disk processing system, comprising:

a first chamber comprising first and second heaters disposed on opposite sides within the first chamber;

a second chamber coupled to first chamber, the second chamber comprising:

a first sputter assembly mounted within a first side of the second chamber to sputter a first side of a disk; and

a third heater mounted within a second side of the second chamber opposite the first side;

a third chamber coupled to the second chamber, the third chamber comprising:

a fourth heater mounted within a first side of the third chamber, the first side of the third chamber and the first side of the second chamber being the same; and

a second sputter assembly mounted within a second side of the third chamber opposite the first side.

2 . The system of claim 1 , wherein the second and third chambers each comprise:

a heater element of a respective heater within the chamber; and

a shield disposed between the heater element and a respective sputter assembly within the chamber.

3 . The system of claim 2 , wherein the shield is constructed from a material comprising graphite.

4 . The system of claim 2 , wherein the shield is removably coupled to a shield holder.

5 . The system of claim 2 , wherein the shield has a first surface area being larger than a second surface area of disk configured to be disposed between the shield and the sputter assembly using a carrier.

6 . The system of claim 2 , wherein the shield has a diameter in a range of 80% to 120% of an outer diameter of the disk.

7 . The system of claim 2 , wherein the shield holder is configured to secure the shield a distance from the heater element, wherein the distance is in a range of 1 millimeter (mm) to 12 mm.

8 . The system of claim 2 , wherein the shield holder is configured to secure the shield a distance from the disk when situated in the chamber using a carrier, wherein the distance is in a range of 1.5 millimeters (mm) to 10 mm.

9 . The system of claim 2 , wherein the shield has a thickness in a range of 0.5 millimeters (mm) to 3.5 mm.

10 . The system of claim 3 , wherein the heater element comprises graphite.

11 . A disk processing method, comprising:

heating a disk in a first chamber to a first temperature, the first chamber comprising first and second heaters disposed on opposite sides within the first chamber;

transporting the disk from the first chamber into a second chamber;

heating the disk in the second chamber while sputtering a first material onto only a first side of the disk, wherein the disk is maintained within +/−5% of the first temperature during the transporting and sputtering during the transporting to and sputtering in the second chamber;

transporting the disk from the second chamber to a third chamber;

heating the disk in the third chamber while sputtering a second material onto only a second side of the disk opposite the first side, wherein the disk is maintained within +/−5% of the first temperature during the transporting to and sputtering in the third chamber.

12 . The method of claim 11 , wherein the first temperature is above 500 degrees Centigrade.

13 . The method of claim 11 , wherein the first and second materials comprises FePt.

14 . The method of claim 11 , wherein heating comprises using a heater disposed in the second chamber opposite to the first side of the disk.

15 . The method of claim 14 , wherein heating further comprises powering the heater in a range of 0.1 kw to 12 kw.

16 . The method of claim 14 , wherein the heater comprises a heating element and wherein the method further comprising shielding the heater element from the sputtering.

17 . The method of claim 16 , wherein shielding is performed using a shield being removably coupled to a shield holder, and wherein the shield holder is configured to secure the shield a distance from the disk in a range of 1.5 millimeters (mm) to 10 mm.

18 . The method of claim 16 , wherein the shield has a diameter in a range of 80% to 120% of an outer diameter of the disk.

19 . A disk processing system, comprising:

means for heating a disk in a first chamber to a first temperature;

means for transporting the disk from the first chamber into a second chamber;

means for sputtering, in the second chamber, a first material onto only a first side of the disk while maintaining the disk within +/−5% of the first temperature during the transporting to and sputtering in the second chamber;

means for transporting the disk from the second chamber to a third chamber;

means for sputtering a second material onto only a second side of the disk opposite the first side while maintaining the disk within +/−5% of the first temperature during the transporting to and sputtering in the third chamber.

20 . The disk processing system of claim 19 , further comprising means for shielding a heater element in the second chamber from the sputtering.