Non-uniform silicon dioxide and air gap for separating memory cells
According to one embodiment, a method for forming a semiconductor device includes: forming a first underlayer film that contains a first chemical element selected from the group consisting of germanium, aluminum, tungsten, hafnium, titanium, tantalum, nickel, cobalt and alkaline earth metals; forming, on the first underlayer film, a second underlayer film that contains a second chemical element selected from the group consisting of germanium, aluminum, tungsten, hafnium, titanium, tantalum, nickel, cobalt and alkaline earth metals, the second chemical element being an chemical element not contained in the first underlayer film; and forming, on the second underlayer film, a silicon oxide film by a CVD or ALD method by use of a silicon source containing at least one of an ethoxy group, a halogen group, an alkyl group, and an amino group, or a silicon source of a siloxane system.
1. A semiconductor device, comprising:
a semiconductor substrate;
plural memory cells on the semiconductor substrate, the memory cells each comprising a charge storage layer on the semiconductor substrate via a gate insulating film and a control gate on the charge storage layer via a first insulating film, the control gate comprising a first part on the first insulating film; and
a second insulating film on a side wall of each of the memory cells, the second insulating film comprising a second part on the first part and a third part on the second part,
wherein the first part comprises a first metal selected from the group consisting of germanium, aluminum, tungsten, hafnium, titanium, tantalum, nickel, cobalt and alkaline earth metals,
the second part comprises a second metal other than the first metal, the second metal being selected from the same group as the first metal,
the third part is provided with a silicon oxide film comprising a first portion covering the side wall of the first part in a direction parallel to a top surface of the semiconductor substrate and a second portion covering any other portion of each of the memory cells, and
the first portion is thicker at the sidewall of the first part in a direction parallel to the top surface of the semiconductor substrate than the second portion.
2. The semiconductor device according to claim 1 , further comprising an air gap between any adjacent two of the memory cells.
3. The semiconductor device according to claim 1 , wherein the second metal is comprised in one of a metal film, an oxide film, a nitride film, a boride film, and a sulfide film.
4. The semiconductor device according to claim 1 , wherein the second metal constitutes a film of not less than 0.1 nm and not more than 1 nm in thickness.
5. The semiconductor device according to claim 1 , wherein the silicon oxide film contains carbon in a concentration of not more than 1×10 19 atoms/cm 3 .