Manufacturing method of semiconductor device and semiconductor device
View Patent ↗An improvement is provided in a manufacturing yield of a semiconductor device including transistors in which gate insulating films have different thicknesses. After a high-breakdown-voltage insulating film is formed over a silicon substrate, a surface of the high-breakdown-voltage insulating film is abraded for a reduction in the thickness thereof so that a middle-breakdown-voltage insulating film is formed to be adjacent to the high-breakdown-voltage insulating film. The high-breakdown-voltage insulating film is formed by a thermal oxidation method so as to extend from an inside of the main surface of the silicon substrate to an outside thereof. The middle-breakdown-voltage insulating film is formed so as to be thinner than the high-breakdown-voltage insulating film. The high-breakdown-voltage insulating film is formed as the gate insulating film of a high-breakdown-voltage MIS transistor, while the middle-breakdown-voltage insulating film is formed as the gate insulating film of a middle-breakdown-voltage MIS transistor.
1. A method of manufacturing a semiconductor device which has a first MISFET and a second MISFET, comprising steps of:
(a) forming a first gate insulating film of the first MISFET over a first region of a semiconductor substrate;
(b) forming a second gate insulating film of the second MISFET over a second region of the semiconductor substrate;
(c) forming a first conductive film over the first and second gate insulating films;
(d) after the step (c), patterning the first conductive film in order to be kept on the first and second gate insulating films, respectively;
(e) after the step (d), forming a plurality of grooves in the first and second regions of the semiconductor substrate by using the first conductive films as a mask;
(f) after the step (e), forming a plurality of element isolations in the grooves by embedding insulating films in the grooves;
(g) after the step (f), forming a second conductive film over the first conductive film of the first region, the first conductive film of the second region, element isolations of the first region and element isolations of the second region;
(h) after the step (g), patterning the second conductive film of the first region in order to be kept on the first conductive film of the first region; and
(i) after the step (g), patterning the second conductive film of the second region and the first conductive film of the second region,
wherein the first and second conductive films of the first region constitute a gate electrode of the first MISFET,
wherein the first and second conductive films of the second region constitute a gate electrode of the second MISFET,
wherein a thickness of the first gate insulating film is larger than a thickness of the second gate insulating film,
wherein, in a gate length direction of the first MISFET, both edges of the second conductive film of the first region are arranged over the element isolations of the first region, and
wherein, in a gate length direction of the second MISFET, both edges of the first and second conductive films of the second region are arranged over the semiconductor substrate.
2. A method of manufacturing a semiconductor device according to the claim 1 , wherein the steps (h) and (i) are performed at the same time.
3. A method of manufacturing a semiconductor device according to the claim 1 , wherein a thickness of the second conductive film is larger than a thickness of the first conductive film.
4. A method of manufacturing a semiconductor device according to the claim 1 , wherein the first and second conductive films include poly silicon films, respectively.
5. A method of manufacturing a semiconductor device according to the claim 1 , wherein the first and second gate insulating films include silicon oxide films, respectively.
6. A method of manufacturing a semiconductor device according to the claim 1 , wherein each of the insulating films includes a silicon oxide film.
7. A method of manufacturing a semiconductor device according to the claim 1 , wherein the semiconductor device constitutes a liquid crystal display driver.
8. A method of manufacturing a semiconductor device which has a first MISFET, a second MISFET, and a third MISFET, comprising steps of:
(a) forming a first gate insulating film of the first MISFET over a first region of a semiconductor substrate;
(b) forming a second gate insulating film of the second MISFET over a second region of the semiconductor substrate;
(c) forming a third gate insulating film of the third MISFET over a third region of the semiconductor substrate;
(d) forming a first conductive film over the first, second, and third gate insulating films;
(f) after the step (d), patterning the first conductive film in order to be kept on the first, second, and third gate insulating films, respectively;
(g) after the step (f), forming a plurality of grooves in the first, second and third regions of the semiconductor substrate by using the first conductive films as a mask;
(h) after the step (g), forming a plurality of element isolations in the grooves by embedding insulating films in the grooves;
(i) after the step (h), forming a second conductive film over the first conductive films of the first, second, and third regions and element isolations of the first, second, and third regions;
(j) after the step (i), patterning the second conductive film of the first region in order to be kept on the first conductive film of the first region;
(k) after the step (i), patterning the second conductive film of the second region and the first conductive film of the second region; and
(l) after the step (i), patterning the second conductive film of the third region and the first conductive film of the third region,
wherein the first and second conductive films of the first region constitute a gate electrode of the first MISFET,
wherein the first and second conductive films of the second region constitute a gate electrode of the second MISFET,
wherein the first and second conductive films of the third region constitute a gate electrode of the third MISFET,
wherein a thickness of the second gate insulating film is smaller than a thickness of the first gate insulating film and is larger than a thickness of the third gate insulating film,
wherein, in a gate length direction of the first MISFET, both edges of the second conductive film of the first region are arranged over the element isolations of the first region,
wherein, in a gate length direction of the second MISFET, both edges of the first and second conductive films of the second region are arranged over the semiconductor substrate, and
wherein, in a gate length direction of the third MISFET, both edges of the first and second conductive films of the third region are arranged over the semiconductor substrate.
9. A method of manufacturing a semiconductor device according to the claim 8 , wherein the steps (j), (k), and (l) are performed at the same time.
10. A method of manufacturing a semiconductor device according to the claim 8 , wherein a thickness of the second conductive film is larger than a thickness of the first conductive film.
11. A method of manufacturing a semiconductor device according to the claim 8 , wherein the first and second conductive films include poly silicon films, respectively.
12. A method of manufacturing a semiconductor device according to the claim 8 , wherein the first, second, and third gate insulating films include silicon oxide films, respectively.
13. A method of manufacturing a semiconductor device according to the claim 8 , wherein each of the insulating films includes a silicon oxide film.
14. A method of manufacturing a semiconductor device according to the claim 8 , wherein the semiconductor device constitutes a liquid crystal display driver.