Semiconductor device
View Patent ↗A method of manufacturing a semiconductor device includes forming an insulating film over a semiconductor substrate, forming a capacitor including a lower electrode, a capacitor dielectric film including a ferroelectric material, and an upper electrode over the insulating film, forming a first protective insulating film over a side surface and upper surface of the capacitor by a sputtering method, and forming a second protective insulating film over the first protective insulating film by an atomic layer deposition method.
1. A semiconductor device, comprising:
an insulating film formed over a semiconductor substrate;
a capacitor formed over the insulating film, the capacitor including a lower electrode, a capacitor dielectric film including a ferroelectric material, and an upper electrode;
a first protective insulating film made of alumina and formed over a side surface and upper surface of the capacitor; and
a second protective insulating film made of alumina and formed over the first protective insulating film, wherein
a density of the alumina in the first protective insulating film is smaller than a density of the alumina in the second protective insulating film, and
the first protective insulating film is in an amorphous state.
2. The semiconductor device according to claim 1 , wherein the second protective insulating film is in an amorphous state.
3. The semiconductor device according to claim 1 , further comprising a third protective insulating film covering the capacitor dielectric film and the upper electrode, wherein the first protective insulating film is formed over the third protective insulating film.