Layout data creation device for creating layout data of pillar-type transistor

1. A semiconductor device comprising:

a pillar-type transistor including:

a plurality of sub-pillar-type transistors arranged in a predetermined area, each of the sub-pillar-type transistors including one or more unit pillar-type transistors arranged in line to a first direction in the predetermined area, each of the sub-pillar-type transistors including a source, a drain and a gate, the sources of the sub-pillar-type transistors being connected in common, the drains of the sub-pillar-type transistors being connected in common, and the gates of the sub-pillar-type transistors being connected in common; and

gate electrode blocks surrounding the plurality of sub-pillar-type transistors.

2. The semiconductor device as claimed in claim 1 , wherein one of the sub-pillar-type transistor and another one of the sub-pillar-type transistor include a different number of the unit pillar-type transistors.

3. The semiconductor device as claimed in claim 1 , wherein the pillar-type transistor further comprises:

an element isolation film surrounding the plurality of the plurality of sub-pillar-type transistors.

4. The semiconductor device as claimed in claim 3 , wherein the gate electrode blocks are formed on a side wall of the element isolation film.

5. The semiconductor device as claimed in claim 4 , further comprising a second pillar-type transistor,

wherein the element isolation film electrically isolates the pillar-type transistor from the second pillar-type transistor.

6. The semiconductor device as claimed in claim 1 , wherein each one of the plurality of sub-pillar-type transistors includes one or more unit pillar-type transistors having a same configuration as one another, the sub-pillar-type transistors in the predetermined area being arranged in an integrated circuit.

7. The semiconductor device as claimed in claim 1 , wherein:

the one or more of the unit pillar-type transistors constituting the pillar-type transistor are arranged by an allocatable number with rounding up to calculate a division number, where the allocatable number represents a number of the unit pillar transistors that can be arranged in a first direction of the predetermined area, the allocatable number being an integer greater than zero, and

the pillar-type transistor is divided into the plurality of sub-pillar-type transistors in the division number.

8. The semiconductor device as claimed in claim 1 , wherein a division of the pillar-type transistor is adjustable by a transistor adjustment unit into the plurality of sub-pillar-type transistors in the predetermined area without changing diameters of the unit pillar transistors.

9. A pillar-type transistor comprising:

a semiconductor substrate;

a plurality of pillars comprising a semiconductor material having a first conductivity type, the plurality of pillars project in a direction perpendicular to the semiconductor substrate in a predetermined element formation area;

gate electrodes being formed around side surfaces of each of the plurality of pillars;

source and drain regions being formed on the semiconductor substrate on lower sides of the pillars and in upper areas of the pillars;

a plurality of sub-pillar-type transistors grouped in a predetermined area, each of the sub-pillar-type transistors including one or more unit pillar-type transistors arranged in line to a first direction in the predetermined area, each of the sub-pillar-type transistors including the source region, the drain region and the gate electrodes, the source regions of each of the sub-pillar-type transistors being connected in common, the drain regions of each of the sub-pillar-type transistors being connected in common, and the gate electrodes of each of the sub-pillar-type transistors being connected in common; and

a gate block surrounding the plurality of sub-pillar-type transistors.

10. The pillar-type transistor as claimed in claim 9 , wherein one of the sub-pillar-type transistor and another one of the sub-pillar-type transistor include a different number of the unit pillar-type transistors.

11. The pillar-type transistor as claimed in claim 9 , further comprising an element isolation film surrounding the plurality of sub-pillar-type transistors.

12. The pillar-type transistor as claimed in claim 11 , wherein the gate electrode blocks are formed on a side wall of the element isolation film.