Semiconductor memory device and fabrication process thereof
View Patent ↗A SRAM includes a first CMOS inverter of first and second MOS transistors connected in series, a second CMOS inverter of third and fourth MOS transistors connected in series and forming a flip-flop circuit together with the first CMOS inverter, and a polysilicon resistance element formed on a device isolation region, each of the first and third MOS transistors is formed in a device region of a first conductivity type and includes a second conductivity type drain region at an outer side of a sidewall insulation film of the gate electrode with a larger depth than a drain extension region thereof, wherein a source region is formed deeper than a drain extension region, the polysilicon gate electrode has a film thickness identical to a film thickness of the polysilicon resistance element, the source region and the polysilicon resistance element are doped with the same dopant element.
1. A method for fabricating a semiconductor memory device, said semiconductor memory device comprising:
a first CMOS inverter comprising first and second MOS transistors having respective, mutually opposite channel conductivity types and connected in series at a first node on a semiconductor substrate;
a second CMOS inverter comprising third and fourth MOS transistors having respective, mutually opposite channel conductivity types and connected in series at a second node on said semiconductor substrate, said second CMOS inverter forming, together with said first CMOS inverter, a flip-flop circuit;
a first transfer transistor provided on said substrate between a first bit line and said first node, said first transfer transistor having a first gate electrode connected to a word line and driven by a selection signal on said word line; and
a second transfer transistor provided on said substrate between a second bit line and said second node, said second transfer transistor having a second gate electrode connected to said word line and driven by a selection signal on said word line,
said method comprising:
forming a first polysilicon pattern on a device region of a first conductivity type defined on said semiconductor substrate by said device isolation region via a gate insulation film, a gate electrode of said first MOS transistor including said first polysilicon pattern;
introducing a first impurity element of said second conductivity type into said device region at a first side of said first polysilicon pattern to form a source region of said second conductivity type at said first side of said first polysilicon pattern in said device;
introducing a second impurity element of said second conductivity type into said device region at said first side and at a second side opposite to said first side of said first polysilicon pattern to form a drain extension region in a surface part of said device region at said second side of said first polysilicon pattern with an impurity concentration lower than an impurity concentration of said source region;
forming sidewall insulation films on respective sidewall surfaces of said first polysilicon pattern; and
introducing a third impurity element of said second conductivity type into said device region while using said first polysilicon pattern and said sidewall insulation films as a mask to form drain regions of said second conductivity type at respective outer parts of said sidewall insulation films of said first side and said second side of said first polysilicon pattern.
2. The method as claimed in claim 1 , wherein said forming said source region introduces said first impurity element into a depth larger than said second impurity region and said third impurity region.
3. The method as claimed in claim 1 , further comprising:
forming a first silicide layer and a second silicide layer on said source region and said drain region respectively and forming a first via-plug and a second via-plug on said source region and said drain region.
4. The method as claimed in claim 1 , further comprising:
forming a second polysilicon pattern simultaneously with said first polysilicon pattern,
said first impurity element being introduced further into said second polysilicon pattern,
said second impurity element being introduced further into said second polysilicon pattern,
said sidewall insulation films being formed further on sidewall surfaces of said second polysilicon pattern,
said third impurity element being further introduced into said second polysilicon pattern.
5. The method as claimed in claim 4 , further comprising:
forming a third silicide layer and a fourth silicide layer on a first region of said second polysilicon pattern and a second region of said second polysilicon pattern respectively; and
forming a third via-plug and a fourth via-plug on said first region and said second region, respectively.