SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
A semiconductor device includes a pair of electromagnetically coupled inductors. Each of the inductors is comprised of a plurality of through electrodes which extend through a semiconductor substrate, and wires which connect the plurality of through electrodes in series.
1 . A semiconductor device comprising an inductor, said inductor including a plurality of through electrodes which extend through a substrate, and wires which connect said plurality of through electrodes in series.
2 . The semiconductor device according to claim 1 , further comprising a magnetic core which serves as a magnetic core for said inductor.
3 . The semiconductor device according to claim 2 , wherein said magnetic core is comprised of a plurality of partial magnetic core segments.
4 . The semiconductor device according to claim 2 , comprising a plurality of said magnetic cores.
5 . The semiconductor device according to claim 2 , wherein said magnetic core and said through electrodes are formed of the same magnetic material.
6 . The semiconductor device according to claim 3 , wherein said magnetic core and said through electrodes are formed of the same magnetic material.
7 . The semiconductor device according to claim 4 , wherein said magnetic core and said through electrodes are formed of the same magnetic material.
8 . The semiconductor device according to claim 5 , wherein said magnetic core and said through electrodes are formed of nickel.
9 . The semiconductor device according to claim 6 , wherein said magnetic core and said through electrodes are formed of nickel.
10 . The semiconductor device according to claim 7 , wherein said magnetic core and said through electrodes are formed of nickel.
11 . The semiconductor device according to claim 2 , further comprising a magnetic element arranged around said inductor.
12 . The semiconductor device according to claim 3 , further comprising a magnetic element arranged around said inductor.
13 . The semiconductor device according to claim 4 , further comprising a magnetic element arranged around said inductor.
14 . The semiconductor device according to claim 5 , further comprising a magnetic element arranged around said inductor.
15 . The semiconductor device according to claim 6 , further comprising a magnetic element arranged around said inductor.
16 . The semiconductor device according to claim 11 , wherein said magnetic element is connected to said magnetic core.
17 . The semiconductor device according to claim 11 , wherein said magnetic core, said through electrodes, and said magnetic element are formed of the same magnetic material.
18 . The semiconductor device according to claim 17 , wherein said magnetic core, said through electrodes, and said magnetic element are formed of nickel.
19 . The semiconductor device according to claim 2 , wherein at least part of said inductor is disposed within a circumference formed by another inductor.
20 . A method of manufacturing a semiconductor device comprising:
forming a throughhole for use as a through wire and a throughhole for use as an inductor through a substrate having a wiring layer formed on one surface, from the other surface of said substrate to said wiring layer;
forming an insulating layer on a side surface of said throughhole for use as a through wire and on a side surface of said throughhole for use as an inductor; and
forming a conductive layer on a bottom surface of said throughhole for use as a through wire, on a bottom surface of said throughhole for use as an inductor, and on said insulating layer.