IP Library › Patent Application 13784305
Patent Application
App. No. 13/784,305

SEMICONDUCTOR CHIP AND MANUFACTURING METHOD THEREOF

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Quick Facts
Patent No.
US None
App. No.
13/784,305
Abstract

A semiconductor device comprising stacked substrates through a bump, the bump comprising a solder bump formed on a copper bump wherein the solder bump includes Zn.

Claims (42)

1 . A semiconductor device comprising:

a first substrate; and

a second substrate stacked on the first substrate through a bump,

the bump comprising a solder bump formed on a copper bump formed over the second substrate;

wherein the solder bump includes Zn.

2 . The semiconductor device according to claim 1 , further comprising;

a through-electrode penetrating the second substrate, the bump being electrically connected with the through-electrode.

3 . The semiconductor device according to claim 1 ,

wherein a concentration of Zn in an upper portion of the solder bump is lower than a concentration of Zn in a lower portion of the solder bump, the lower portion of the solder bump is in contact with the copper bump.

4 . The semiconductor device according to claim 1 ;

wherein the solder bump includes 1 to 5% by weight of Zn.

5 . The semiconductor device according to claim 1 ;

wherein the solder bump further includes Bi

6 . The semiconductor device according to claim 2 ;

wherein the solder bump further includes Bi.

7 . The semiconductor device according to claim 1 ;

wherein the solder bump further includes Cu.

8 . The semiconductor device according to claim 2 ;

wherein the solder hump further includes Cu.

9 . The semiconductor device according to claim 4 ;

wherein the solde bump further includes Cu.

10 . A method of manufacturing a semiconductor device, the semiconductor device comprising a first substrate stacked on a second substrates through a bump, the bump comprising a solder bump formed on a copper hump formed over the first substrate, the method comprising:

forming the copper bump over the first substrate;

forming a Sn/Zn alloy layer on the copper bump;

forming a Sn/Ag alloy layer on the Sn/Zn alloy; and

heating and reflowing the Sn/Zn alloy layer and the Sn/Ag alloy layer.

11 . The method according to claim 10 ;

wherein the first substrate has a through-electrode penetrating the first substrate, and the bump is electrically connected with the through-electrode.

12 . The method according to claim 10 ;

wherein the Sn/Zn alloy includes 1 to 5% by weight of Zn.

13 . The method according to claim 10 ;

wherein the Sn/Zn alloy layer and/or the Sn/Ag alloy layer further includes Bi.

14 . The method according to claim 11 ;

wherein the Sn/Zn alloy layer and/or the Sn/Ag alloy layer further includes Bi.

15 . The method according to claim 12 ;

wherein the Sn/Zn alloy layer and/or the Sn/Ag alloy layer further includes Bi.

16 . The method according to claim 10 ;

wherein the Sn/Zn alloy layer and/or the Sn/Ag alloy layer further includes Cu.

17 . The method according to claim 11 ;

wherein the Sn/Zn alloy layer and/or the Sn/Ag alloy layer further includes Cu.

18 . The method according to claim 12 ;

wherein the Sn/Zn alloy layer and/or the Sn/Ag alloy layer further includes Cu.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 15, 2014
From: ELPIDA MEMORY, INC.
To: PS4 LUXCO S.A.R.L.
Reel/Frame 032901/0196 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 27, 2013
From: MIYAZAKI, TORU
To: ELPIDA MEMORY, INC.
Reel/Frame 030699/0716 →