Semiconductor device and method for fabricating thereof
View Patent ↗A silicon nitride film, which is a second hard mask, is dry etched to be removed completely. The silicon nitride film, which is formed on a sidewall of a silicon nitride film used as a first hard mask, has a relatively low etching rate. Therefore, if the silicon nitride film is continued etching until the corresponding portion thereof is removed, polysilicon is etched in a direction of depth in trench shape. Then, floating gates in adjacent cells are separated and a step portion of the polysilicon is formed. Consequently, a remaining portion of the silicon nitride film used as the first hard mask is removed, an ONO film is laminated on a whole surface of the poly silicon having the step portion on an edge that has been etched, and then, a polysilicon for a control gate is laminated on the ONO film.
1. A method of fabricating a semiconductor device, comprising:
forming a first mask having a first window having a size W 1 on a conductive film that defines a floating gate of the semiconductor;
etching a part of the conductive film in a thickness direction thereof from the first window of the first mask;
forming a second mask having a second window that has a size W 2 (<W 1 ) on the conductive film that is concentric with the first window; and
forming a step on a sidewall of the conductive film wherein the first and second masks are photoresist masks.
2. The method as claimed in claim 1 , wherein the floating gate comprises one of polysilicon and amorphous silicon.
3. The method as claimed in claim 1 , wherein the floating gate is doped with phosphorus.
4. The method as claimed in claim 1 , wherein sidewalls of the floating gate have a plurality of steps on which a dielectric film is provided.
5. The method as claimed in claim 4 , wherein the steps are provided at intervals approximately equal to h/(n+1) where n is the number of steps and h is the height of the sidewalls of the floating gate.