Semiconductor device, power-supply unit, amplifier and method of manufacturing semiconductor device

1. A semiconductor device, comprising:

a semiconductor layer formed above a substrate;

an insulating film formed on the semiconductor layer; and

an electrode formed on the insulating film,

wherein the electrode is a gate electrode,

wherein the semiconductor layer includes a first semiconductor layer and a second semiconductor layer formed above the first semiconductor layer,

wherein the insulating film includes a first insulating film and a second insulating film formed on the first insulating film,

wherein a concentration of any one of nitrogen, oxygen, hydrogen and fluorine included in the first insulating film is higher than the concentration included in the second insulating film to cause the first insulating film to have a lower membrane stress than the second insulating film,

wherein the first insulating film having a higher concentration of any one of nitrogen, oxygen, hydrogen, and fluorine than the second insulating film directly contacts the semiconductor layer,

wherein the semiconductor device has a source electrode and a drain electrode formed in contact with the first semiconductor layer or the second semiconductor layer, and

wherein the insulating film is formed by an amorphous film, wherein carbon is a chief ingredient of the amorphous film.

2. The semiconductor device as claimed in claim 1 , wherein the first semiconductor layer includes GaN, and the second semiconductor layer includes AlGaN.

3. A semiconductor device, comprising:

a semiconductor layer formed above a substrate;

an insulating film formed on the semiconductor layer; and

an electrode formed on the insulating film,

wherein the electrode is a gate electrode,

wherein the semiconductor layer includes a first semiconductor layer and a second semiconductor layer formed above the first semiconductor layer,

wherein the insulating film includes a first insulating film and a second insulating film formed on the first insulating film,

wherein a concentration of any one of nitrogen, oxygen, hydrogen and fluorine included in the first insulating film is higher than the concentration included in the second insulating film to cause the first insulating film to have a lower membrane stress than the second insulating film,

wherein the first insulating film having a higher concentration of any one of nitrogen, oxygen, hydrogen, and fluorine than the second insulating film directly contacts the semiconductor layer,

wherein the semiconductor device has a source electrode and a drain electrode formed in contact with the first semiconductor layer or the second semiconductor layer,

wherein an opening is formed in the second semiconductor layer, and

the gate electrode is formed in the inside of the opening, and

wherein the insulating film is formed by an amorphous film, wherein carbon is a chief ingredient of the amorphous film.

4. A power-supply unit including a semiconductor device, comprising:

a semiconductor layer formed above a substrate;

an insulating film formed on the semiconductor layer; and

an electrode formed on the insulating film,

wherein the insulating film includes a first insulating film and a second insulating film formed on the first insulating film,

wherein a concentration of any one of nitrogen, oxygen, hydrogen and fluorine included in the first insulating film is higher than the concentration included in the second insulating film to cause the first insulating film to have a lower membrane stress than the second insulating film,

wherein the first insulating film having a higher concentration of any one of nitrogen, oxygen, hydrogen, and fluorine than the second insulating film directly contacts the semiconductor layer,

wherein the semiconductor device is included in one of a power supply unit and an amplifier, and

wherein the insulating film is formed by an amorphous film, wherein carbon is a chief ingredient of the amorphous film.