Semiconductor device
A semiconductor device includes a semiconductor substrate of a first conductivity type, a first region of a second conductivity type formed in the semiconductor substrate, a second region of the first conductivity type formed in the first region, a source region of the second conductivity type formed in the second region, a drain region of the second conductivity type formed in the first region, a first junction part including a part of a border between the first region and the second region, which is on the side of the drain region, a second junction part including a part of the border between the first region and the second region, which is at a location different from the first junction part, a gate electrode formed above the first junction, and a conductor pattern formed above the second junction part and being electrically independent from the gate electrode.
1. A semiconductor device comprising:
a semiconductor substrate of a first conductivity type;
a first region of a second conductivity type opposite to the first conductivity type formed in the semiconductor substrate;
a second region of the first conductivity type formed in the first region;
a source region of the second conductivity type formed in the second region;
a drain region of the second conductivity type formed in the first region;
a first junction part that includes a part of a border between the first region and the second region, and that is on the side of the drain region;
a second junction part that includes a part of the border between the first region and the second region, and that is at a location different from the first junction part;
a device isolation insulation film formed in the semiconductor substrate and located on the second junction part;
a gate electrode formed above the first junction; and
a conductor pattern formed on the device isolation insulation film and being electrically independent from the gate electrode, the source region and the drain region.
2. The semiconductor device according to claim 1 , wherein
the conductor pattern is electrically connected to the semiconductor substrate.
3. The semiconductor device according to claim 1 , wherein
the gate electrode has a first width, and
the conductor pattern has a second width larger than the first width.
4. The semiconductor device according to claim 1 , wherein
the gate electrode and the conductor pattern are circularly laid out, surrounding the second region.
5. The semiconductor device according to claim 1 , wherein
the conductor pattern includes a first part and a second part,
the first part is positioned nearer the gate electrode than the second part,
the second part is connected to the first part, and
a width of the first part is smaller than a width of the second part.
6. The semiconductor device according to claim 1 , wherein
the source region is positioned remote from the first junction part by a first distance, and
the drain region is positioned remote from the first junction part by a second distance larger than the first distance.
7. The semiconductor device according to claim 1 , wherein
the gate electrode and the conductor pattern are formed of the same material.
8. A semiconductor device comprising:
a semiconductor substrate of a first conductivity type;
a first region of a second conductivity type opposite to the first conductivity type formed in the semiconductor substrate;
a second region of the first conductivity type formed in the first region;
a source region of the second conductivity type formed in the second region;
a drain region of the second conductivity type formed in the first region;
a first junction part that includes a part of a border between the first region and the second region, and that is on the side of the drain region;
a second junction part that includes a part of the border between the first region and the second region, and that is at a location different from the first junction part;
a gate electrode formed above the first junction; and
a conductor pattern formed above the second junction part and being electrically independent from the gate electrode,
wherein a first voltage is applied to the semiconductor substrate and the conductor pattern, and
a second voltage lower than the first voltage is applied to the second region.
9. The semiconductor device according to claim 8 , wherein
the conductor pattern is electrically connected to the semiconductor substrate.
10. The semiconductor device according to claim 8 , wherein
the gate electrode has a first width, and
the conductor pattern has a second width larger than the first width.
11. The semiconductor device according to claim 8 , wherein
the gate electrode and the conductor pattern are circularly laid out, surrounding the second region.
12. The semiconductor device according to claim 8 , wherein
the conductor pattern includes a first part and a second part,
the first part is positioned nearer the gate electrode than the second part,
the second part is connected to the first part, and
a width of the first part is smaller than a width of the second part.
13. The semiconductor device according to claim 8 , wherein
a device isolation insulation film formed in the semiconductor substrate and located on the second junction part,
wherein the conductor pattern is located on the device isolation insulation film.
14. The semiconductor device according to claim 8 , wherein
the source region is positioned remote from the first junction part by a first distance, and
the drain region is positioned remote from the first junction part by a second distance larger than the first distance.
15. The semiconductor device according to claim 8 , wherein
the gate electrode and the conductor pattern are formed of the same material.
16. The semiconductor device according to claim 1 , wherein
the second junction part is connected to the device isolation insulation film.
17. The semiconductor device according to claim 13 , wherein
the second junction part is connected to the device isolation insulation film.