Patterning for selective area deposition
A method of producing a patterned inorganic thin film element includes providing a substrate. A thin layer of polymeric inhibitor is uniformly depositing on the substrate. A patterned mask having open areas is provided on the thin layer of polymeric inhibitor. The thin layer of polymeric inhibitor is patterned by removing inhibitor from areas exposed by the open areas of the patterned mask using a highly reactive oxygen process. An inorganic thin film layer is deposited on the substrate in the areas exposed by the removal of the thin layer of polymeric inhibitor using an atomic layer deposition process.
1. A method of producing a patterned thin film element comprising:
providing a substrate;
providing a polymeric inhibitor that retains its ability to inhibit atomic layer deposition after exposure to a highly reactive oxygen process;
depositing a thin layer of the polymeric inhibitor on the substrate;
providing a patterned mask having open areas on the thin layer of the polymeric inhibitor;
patterning the thin layer of the polymeric inhibitor by removing inhibitor from areas exposed by the open areas of the patterned mask using a highly reactive oxygen process;
depositing an inorganic thin film layer on the substrate only in areas exposed by the removal of the thin layer of the polymeric inhibitor using an atomic layer deposition process to form a patterned inorganic thin film layer on the substrate;
removing the printed patterned mask after exposure to the highly reactive oxygen process; and
exposing the patterned thin layer of the polymeric inhibitor to a second highly reactive oxygen process after the printed pattern mask is removed, wherein providing the patterned mask includes printing the patterned mask on the thin layer of the polymeric inhibitor.
2. The method of claim 1 , wherein printing the patterned mask includes using a flexographic, inkjet, gravure, offset lithography, microcontact printing, or screen printing process.
3. The method of claim 2 , wherein printing the patterned mask includes using an ink including a polymer.
4. The method of claim 1 , wherein the patterned mask is a patterned thin layer of polymeric mask material that is different when compared to the thin layer of the polymeric inhibitor.
5. The method of claim 4 , wherein patterning the thin layer of the polymeric inhibitor by removing inhibitor from areas exposed by the open areas of the patterned mask using the highly reactive oxygen process also removes the patterned thin layer of polymeric mask material.
6. The method of claim 5 , wherein a portion of the thin layer of the polymeric inhibitor that was originally under the polymeric mask material also is removed during the exposure to the highly reactive oxygen process.
7. The method of claim 1 , wherein the highly reactive oxygen process is an oxygen plasma.
8. The method of claim 1 , wherein the highly reactive oxygen process is an UV-ozone process.
9. The method of claim 1 , wherein the thin layer of the polymeric inhibitor includes a solvent-soluble polymer.
10. The method of claim 9 , wherein the solvent-soluble polymer has a molecular weight greater than 10000.
11. The method of claim 9 , wherein the thin layer of the polymeric inhibitor includes an acrylate.
12. The method of claim 11 , wherein the thin layer of the polymeric inhibitor includes polymethylmethacrylate (PMMA).
13. The method of claim 1 , further including removing the thin layer of the polymeric inhibitor after depositing the inorganic thin film layer.
14. The method of claim 1 , wherein the thin layer of the polymeric inhibitor includes polymethylmethacrylate (PMMA).
15. The method of claim 14 , wherein the highly reactive oxygen process is one of an oxygen plasma and an UV-ozone process.
16. A method of producing a patterned thin film element comprising:
providing a substrate;
depositing a thin layer of polymeric inhibitor on the substrate;
providing a patterned mask having open areas on the thin layer of polymeric inhibitor;
patterning the thin layer of polymeric inhibitor by removing inhibitor from areas exposed by the open areas of the patterned mask using a highly reactive oxygen process;
depositing a first inorganic thin film layer on the substrate in areas exposed by the removal of the thin layer of polymeric inhibitor using an atomic layer deposition process to form a patterned inorganic thin film layer on the substrate; and
depositing a second inorganic thin film layer on the first inorganic thin film layer in areas not containing the thin layer of polymeric inhibitor using an atomic layer deposition process to form a patterned second inorganic thin film layer on the first inorganic thin film layer.
17. The method of claim 16 , further comprising exposing the first inorganic thin film layer and the thin polymeric inhibitor layer to a highly reactive oxygen process prior to depositing the second inorganic thin film.
18. The method of claim 16 , wherein the thin layer of the polymeric inhibitor includes polymethylmethacrylate (PMMA).
19. The method of claim 18 , wherein the highly reactive oxygen process is one of an oxygen plasma and an UV-ozone process.
20. The method of claim 18 , wherein providing the patterned mask includes one of printing the patterned mask on the thin layer of polymeric inhibitor and placing a shadow mask on the thin layer of polymeric inhibitor.