Semiconductor device and manufacturing method of the same
A semiconductor device includes a gate electrode formed over a semiconductor substrate, and a sidewall spacer formed on a sidewall of the gate electrode. The sidewall spacer formed along the sidewall parallel to a gate length direction of the gate electrode has a first thickness, and the sidewall spacer formed along the sidewall parallel to a gate width direction of the gate electrode has a second thickness that is greater than the first thickness.
1. A semiconductor device comprising:
a gate electrode formed over a semiconductor substrate; and
a sidewall spacer formed on a sidewall of the gate electrode;
wherein the sidewall spacer formed along the sidewall parallel to a gate length direction of the gate electrode has a first thickness, and the sidewall spacer formed along the sidewall parallel to a gate width direction of the gate electrode has a second thickness which is greater than the first thickness.
2. The semiconductor device as claimed in claim 1 , wherein the sidewall spacer includes a first film formed along the sidewall parallel to the gate width direction, and the sidewall spacer includes a second film formed on the first film and on the sidewall parallel to the gate length direction.
3. The semiconductor device as claimed in claim 2 , wherein the second film is in contact with the sidewall parallel to the gate length direction.
4. The semiconductor device as claimed in claim 1 , wherein the sidewall parallel to the gate length direction is located over an element separating region.
5. The semiconductor device as claimed in claim 1 , further comprising a silicide on the gate electrode.