IP Library › Granted Patent US 9,117,675
Granted Patent B2
US 9,117,675 · App. 13/965,629 · Granted Aug 25, 2015

Semiconductor device production method

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,117,675
App. No.
13/965,629
Granted
Aug 25, 2015
Kind
B2
Abstract

A semiconductor device production method includes: forming a protection film on a semiconductor substrate; forming a first resist pattern on the protection film; implanting a first impurity ion into the semiconductor substrate using the first resist pattern as a mask; removing the first resist pattern; forming on the surface of the semiconductor substrate a chemical reaction layer that takes in surface atoms from the semiconductor substrate through chemical reaction, after the removing of the first resist pattern; removing the chemical reaction layer formed on the semiconductor substrate and removing the surface of the semiconductor substrate, after the forming of the chemical reaction layer; and growing a semiconductor layer epitaxially on the surface of the semiconductor substrate, after the removing of the surface of the semiconductor substrate.

Claims (18)

1. A semiconductor device production method comprising:

forming a first protection film on a semiconductor substrate;

forming a first resist pattern, which has an opening portion defining a well region in a surface of the semiconductor substrate, on the first protection film;

implanting a first p-type impurity ion into the well region of the semiconductor substrate using the first resist pattern as a mask, and the well region being p-type;

implanting a first impurity ion into the well region of the semiconductor substrate using the first resist pattern as a mask;

removing the first resist pattern;

removing the first protection film;

forming a second protection film on the semiconductor substrate after the removing of the first protection film;

forming a second resist pattern which has an opening portion defining a channel region in the well region of the semiconductor substrate, on the second protection film;

implanting a second impurity ion into the channel region of the semiconductor substrate using the second resist pattern as a mask;

implanting a second p-type impurity ion into the channel region of the semiconductor substrate using the second resist pattern as a mask, after the implanting of the second impurity ion, and the channel region being p-type;

removing the second resist pattern;

removing the second protection film and

growing a semiconductor layer epitaxially on the semiconductor substrate, after the removing of the second resist pattern.

2. The semiconductor device production method according to claim 1 , further comprising removing the surface of the semiconductor substrate before the epitaxial growing of the semiconductor layer, after the removing of the second protection film.

3. The semiconductor device production method according to claim 1 , wherein the first impurity ion is either germanium or silicon.

4. The semiconductor device production method according to claim 1 , wherein the second impurity ion is carbon.

5. The semiconductor device production method according to claim 1 , wherein the first p-type impurity ion and the second p-type impurity ion are boron ion.