Fill factor opto-sensitive device

1. An opto-sensitive device, comprising:

a silicon substrate that is at least one of n and p-type doped, the silicon substrate corresponding to a first electrode of a photodetector;

a second photodetector electrode established within the silicon substrate, wherein the second photodetector electrode is inversely doped with respect to the silicon substrate, wherein at least one of the first and second electrodes of the photodetector are capable of releasing electrons in response to receiving incident light of a predetermined wavelength;

at least one photodetector electrical contact connected to at least one of the first electrode and second electrode of the photodetector, the at least one photodetector electrical contact being configured to carry the electrons released from the at least one of the first and second electrodes; and

a capacitor positioned over the first electrode of the photodetector and the second electrode of the photodetector, wherein the capacitor is formed using Complementary Metal-Oxide-Semiconductor (CMOS) technologies, wherein the capacitor is at least partially transparent with respect to the predetermined wavelength, wherein the capacitor comprises a first capacitive plate and a dielectric positioned between the first capacitive plate and the second electrode of the photodetector, and wherein the first capacitive plate is included within the photodetector.

2. The opto-sensitive device of claim 1 , wherein the capacitor is configured to integrate an electrical signal received from the photodetector via the at least one photodetector electrical contact.

3. The opto-sensitive device of claim 1 , wherein the incident light is absorbed between the first and second electrodes of the photodetector after the incident light has passed through the capacitor.

4. The opto-sensitive device of claim 1 , wherein the dielectric comprises silicon-dioxide, wherein the first capacitive plate comprises polysilicon, and wherein the second photodetector electrode also functions as a second capacitive plate for the capacitor.

5. The opto-sensitive device of claim 1 , wherein the capacitor further comprises a second capacitive plate, and a dielectric positioned between the first capacitive plate and the second capacitive plate.

6. The opto-sensitive device of claim 5 , wherein each of the first capacitive plate, the second capacitive plate, and the dielectric are provided on top of the second photodetector electrode and wherein an isolation layer is positioned between the first capacitive plate and the second photodetector electrode.

7. The opto-sensitive device of claim 6 , wherein the isolation layer comprises at least one of silicon-dioxide, nitride, and oxynitride and wherein the isolation layer electrically isolates the second photodetector electrode from the first capacitive plate of the capacitor.

8. The opto-sensitive device of claim 1 , further comprising at least one of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and resistor mounted on the substrate and adjacent to the second photodetector electrode.

9. The opto-sensitive device of claim 1 , wherein the second photodetector electrode is configured with a plurality of finger structures with gaps therebetween.

10. The opto-sensitive device of claim 9 , wherein the capacitor is positioned above the gaps.

11. The opto-sensitive device of claim 1 , wherein the predetermined wavelength is between 600nm and 1.1 um.

12. A pixel configured for use in an opto-sensitive device, the pixel comprising:

a photodetector comprising:

a first electrode that is at least one of n and p-type doped silicon;

a second electrode that is inversely doped with respect to the first electrode, wherein at least one of the first and second electrodes of the photodetector are capable of releasing electrons in response to receiving incident light; and

a capacitor positioned over the first electrode of the photodetector and the second electrode of the photodetector, wherein the capacitor is formed using Complementary Metal-Oxide-Semiconductor (CMOS) technologies, wherein the capacitor comprises a first capacitive plate and a dielectric positioned between the first capacitive plate and the second photodetector electrode, wherein the first capacitive plate is included within the photodetector, and wherein the capacitor is at least partially transparent with respect to the incident light.

13. The pixel of claim 12 , wherein at least one electrode of the capacitor is further connected to additional electronics and provides an electronic signal as an output to the additional electronics.

14. The pixel of claim 12 , wherein the dielectric comprises silicon-dioxide, wherein the first capacitive plate comprises polysilicon, and wherein the second electrode of the photodetector also functions as a second capacitive plate for the capacitor.

15. The pixel of claim 12 , wherein the capacitor further comprises a second capacitive plate, and a dielectric positioned between the first capacitive plate and the second capacitive plate, wherein each of the first capacitive plate, the second capacitive plate, and the dielectric are provided on top of the second electrode of the photodetector, and wherein an isolation layer is positioned between the first capacitive plate and the second electrode of the photodetector.

16. The pixel of claim 12 , wherein the second electrode of the photodetector is configured with a plurality of finger structures with gaps therebetween.

17. The pixel of claim 16 , wherein the capacitor is positioned above the gaps.

18. An active array of pixels comprising the pixel of claim 12 .

19. A method of operating an opto-sensitive device manufactured with Complementary Metal-Oxide-Semiconductor (CMOS) technology, the method comprising:

receiving incident light at a capacitor comprising, a capacitive plate and a dielectric positioned between the capacitive plate and an electrode of a photodetector;

allowing at least some of the incident light received at the capacitor to pass through the capacitor;

receiving the incident light that has passed through the capacitor at the photodetector;

converting the incident light received at the photodetector into an electrical signal;

providing the electrical signal to the capacitor that received the incident light;

integrating the electrical signal with the capacitor that received the incident light; and

providing the integrated electrical signal as an output of the opto-sensitive device.

20. The method of claim 19 , wherein at least one of the integrated electrical signal and the electrical signal are provided to a CMOS transistor that is established in a substrate also supporting the photodetector.