Semiconductor memory device, method of adjusting the same and information processing system including the same
A semiconductor device includes an interface chip including: an internal data terminal, and a timing data storage circuit configured to output a plurality of timing set signals, and a plurality of core chips stacked with one another, each of the core chips including a plurality of memory cells, an output control circuit coupled to the timing data storage circuit of the interface chip, the output control circuit being configured to receive a corresponding one of the timing set signals and to output an output timing signal in response to the corresponding one of the timing set signals, and a data output circuit coupled to the internal data terminal of the interface chip, the data output circuit being configured to output data in response to the output timing signal, the data being derived from a corresponding one of the memory cells.
1. A semiconductor device comprising:
an interface chip including:
an internal data terminal; and
a timing data storage circuit configured to output a plurality of timing set signals; and
a plurality of core chips stacked with one another, each of the core chips including:
a plurality of memory cells;
an output control circuit coupled to the timing data storage circuit of the interface chip, the output control circuit being configured to receive a corresponding one of the timing set signals and to output an output timing signal in response to the corresponding one of the timing set signals; and
a data output circuit coupled to the internal data terminal of the interface chip, the data output circuit being configured to output data in response to the output timing signal, the data being derived from a corresponding one of the memory cells.
2. The semiconductor device as claimed in claim 1 , wherein the timing set signal of one of the core chips indicates a difference of operation speed between the interface chip and the one of the core chips.
3. The semiconductor device as claimed in claim 1 , each of the core chips further including:
a semiconductor substrate; and
a plurality of through silicon vias each penetrating through the semiconductor substrate.
4. The semiconductor device as claimed in claim 3 , wherein the data output circuit is configured to output data to an associated one of the through silicon vias.
5. The semiconductor device as claimed in claim 1 , wherein the interface chip and the core chips are stacked with one another.
6. The semiconductor device as claimed in claim 1 , wherein the timing data storage circuit includes a plurality of nonvolatile memory elements written timing set signals.
7. The semiconductor device as claimed in claim 6 , wherein the nonvolatile memory element comprises anti-fuse element.