Semiconductor device and method for manufacturing semiconductor device
A semiconductor device includes an insulation film formed above a semiconductor substrate, a conductor containing Cu formed in the insulation film, and a layer film formed between the insulation film and the conductor and formed of a first metal film containing Ti and a second metal film different from the first metal film, a layer containing Ti and Si is formed on the surface of the conductor.
1. A semiconductor device comprising:
a semiconductor substrate;
a first insulation film formed above the semiconductor substrate;
a trench formed in the first insulation film;
a conductor, which includes Cu, formed in the trench;
a layer film, which includes a first metal film and a second metal film, formed between the first insulation film and the conductor, the first metal film including Ti, the second metal film including Ta, and the second metal film being located between the conductor and the first metal film;
a barrier insulation film formed on the conductor and the first insulation film; and
a layer, which includes Ti and Si, formed in an interface between the conductor and the barrier insulation film.
2. The semiconductor device according to claim 1 , wherein
the layer film is formed on a side surface and a bottom surface of the trench.
3. The semiconductor device according to claim 1 , wherein
a first contact hole is formed in the first insulation film,
the trench is connected to a top of the first contact hole,
the layer film is formed on at least the side a side surface of the first contact hole, and on a side surface and a bottom surface of the trench.
4. The semiconductor device according to claim 1 , further comprising:
a second insulation film formed directly on the barrier insulation film.
5. The semiconductor device according to claim 1 , wherein the barrier insulation film includes silicon, carbon and nitrogen.
6. The semiconductor device according to claim 1 , wherein the barrier insulation film includes silicon, carbon and oxygen.
7. The semiconductor device according to claim 1 , wherein the layer is formed islets separated each other.