Semiconductor device having optical fuse and electrical fuse
A method for manufacturing a stacked semiconductor memory device includes testing a plurality of memory chips to detect first defective addresses, programming optical fuses with first defective address information on each of the plurality of memory chips that have the first defective addresses, stacking the plurality of memory chips, testing the stacked memory chips to detect second defective addresses, and programming electrical fuses with second defective address information.
1. A method for manufacturing a stacked semiconductor memory device comprising:
testing a plurality of memory chips to detect first defective addresses;
programming optical fuses with first defective address information on each of the plurality of memory chips that have the first defective addresses;
stacking the plurality of memory chips;
testing the stacked memory chips to detect second defective addresses; and
programming electrical fuses with second defective address information;
wherein an interface chip is stacked with the plurality of memory chips and the electrical fuses are located on the interface chip.
2. The method as claimed in claim 1 , wherein the testing to detect the first defective addresses is performed while the plurality of memory chips are on one or more wafers and the one or more wafers are diced to provide the plurality of memory chips in singulated form prior to stacking.
3. The method as claimed in claim 1 , further comprising packaging the plurality of memory chips in resin after stacking.
4. The method as claimed in claim 1 , further comprising subjecting the plurality of memory chips to a burn-in test after stacking.
5. The method as claimed in claim 1 , wherein the first defective addresses are row addresses.
6. The method as claimed in claim 5 , wherein the second defective addresses are row addresses.
7. The method as claimed in claim 5 , wherein the second defective addresses are column addresses.
8. The method as claimed in claim 1 , wherein the first defective addresses are column addresses.
9. The method as claimed in claim 8 , wherein the second defective addresses are row addresses.
10. The method as claimed in claim 8 , wherein the second defective addresses are column addresses.
11. The method as claimed in claim 1 , wherein the second defective addresses are row addresses.
12. The method as claimed in claim 1 , wherein the second defective addresses are column addresses.
13. A method for manufacturing a stacked semiconductor memory device comprising:
testing a plurality of memory chips to detect first defective addresses;
programming optical fuses with first defective address information on each of the plurality of memory chips that have the first defective addresses;
stacking the plurality of memory chips;
testing the stacked memory chips to detect second defective addresses; and
programming electrical fuses with second defective address information;
wherein the plurality of memory chips are, at least at completion of the manufacturing of the stacked semiconductor memory device, connected by a plurality of through silicon vias.
14. The method as claimed in claim 1 , wherein the plurality of memory chips are synchronous dynamic random access memories.
15. The method as claimed in claim 14 , wherein the plurality of memory chips are double data rate synchronous dynamic random access members.